Features:
- All Diffused Structure
- Interdigitated Amplifying Gate Configuration
- Blocking capabilty up to 2500 volts
- Guaranteed Maximum Turn-Off Time
- High dV/dt Capability
- Pressure Assembled Device
PRODUCT VISUAL01 / GALLERY
POWER COMPONENT
YZPST-FR1000AX50
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ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Blocking - Off State
Device Type | VDRM (1) | VDSM (1) |
FR1000AX50 | 2500 | 2500 |
VDRM = Repetitive peak off state voltage
Repetitive peak off state leakage | IDRM |
20 mA
80mA (3)
|
Critical rate of voltage rise | dV/dt (4) | 700 V/msec |
Conducting - on state
| Parameter | Symbol | Max. | Typ. | Units | Conditions | |
RMS value of on-state current | ITRMS | 1550 | A | Nominal value | ||
IT(AV) |
1000
| A | Continuous single-phase,half sine wave,180°conduction | |||
Peak one cycle surge
(non repetitive) current
| ITSM | 14000 | A |
8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
| ||
I square t | I2t | 8.2.x105 | A2s | 8.3 msec and 10.0 msec | ||
RNS reverse currrnt | IR(RMS) | 630 | A | |||
Average reverse current | IR(AV) | 400 | A | Continuous single-phase,half sine wave,180°conduction | ||
Peak on-state voltage | VTM | 2.2 | V | ITM=1000A Tj = 125 oC | ||
Peak reverse voltage | VRM | 4.0 | V | IRM=1200A, Tj = 125 oC | ||
Critical rate of rise of on-state
current
| di/dt | 300 | A/ms | VD=1/2VDRM,ITM=800A f=60HZ IGM=1.5A,diG/dt=1.0A/us,Tj=125℃ | ||
Critical rate of decrease of reverse conmmutating current | (di/dt)C | 200 | A/ms | ITM=4000A,tw=60us,IRM=4000A,dv/dt=700V/us,VDM=1/2VDRN,Tj=125℃,Saturable reactor7500v.us |
ELECTRICAL CHARACTERISTICS AND RATINGS (cont.)
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Peak gate power dissipation | PGM | 30 | W | tp = 40 us | ||
Average gate power dissipation | PG(AV) | 8 | W | |||
Peak gate current | IGM | 10 | A | |||
Gate current required to trigger all units | IGT | 350 | mA | VD = 6 V;RL = 2 ohms;Tj = +25 oC | ||
Gate voltage required to trigger all units | VGT | 4 | V | VD = 6 V;RL = 2 ohms;Tj = 25oC | ||
Peak non- trigger voltage | VGD | 0.2 | V | Tj = 125 oC;VD=1/2VDRM |
Dynamic
| Parameter | Symbol | Max. | Typ. | Units | Conditions | |
tq | 50 | ms |
ITM =4000 A; di1/dt = -200A/ms;
di2/dt=50A/us,IRM=500A; dV/dt =700 V/ms VDR=1250V
Tj = 125 oC;tw=60us
|
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating temperature | Tj | -40 | +125 | oC | ||
Storage temperature | Tstg | -40 | +150 | oC | ||
Thyristor part thermal resistance - junction to fin | RQⅠ (j-f) | 0.022 | oC/W | Double sided cooled | ||
Diode part thermal resistamce – junction to fin | RQⅢ (j-f) | 0.070 | oC/W | Double sided cooled | ||
Mounting force | P | 45 | kN | |||
Weight | W | 670 | g |
* Mounting surfaces smooth, flat and greased
CASE OUTLINE AND DIMENSIONS.
FR1000AX50 Reverse-conducting Thyristor
YZPST can provide Following Equivalent List of Reverse Conducting Thyristors (Capsule Types)
| Type | IF(AV) | VRR M | IFSM @TVJM &10ms | IRRM (max) &Tj= TVJM | VTM(max) | trr(max) | Tvj | Rthjc | F±10% | |
| A | V | KA | IFM(A) | V | µs | V | °C | K/W | KN | |
SHR400R22(21) (CSR328) | 240 | 1300 | 5600 | 40 | 500 | 2.3 | 3 | 125 | 0.08 | 16 |
FR600AW (AX) | 150 | 2500 | 3500 | 50 | 1200 | 4 | 3 | 125 | 0.03 | 26 |
| FR1000BX(BW) | 400 | 2500 | 6000 | 100 | 1200 | 4 | 4 | 125 | 0.022 | 40 |
| TP909FC | 400 | 2500 | 6000 | 100 | 1000 | 2.6 | 4 | 125 | 0.02 | 33 |
| TP978FC | 400 | 2400 | 6000 | 100 | 1000 | 2.6 | 4 | 125 | 0.021 | 33 |
For more information about Reverse Conducting Thyristor please download the PDF file above named " YANGZHOU POSITIONING TECH CO Power thyristor and diode parts "
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