YZPST-30TPS12

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30TPS12 Thyristors P/N:YZPST-30TPS12

High Voltage 30TPS12 30A SCR TO-247

DESRCRIPTION:

The 30TPS12 High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.Typical applications are in input rectification (soft start) and these products are designed to be used with input diodes, switches and output rectifiers,which are available in identical package outlines.

Symbol

Symbol	Value
IGT	≤35 mA
IT(RMS)	30 A
VRRM	1200 V

ABSOLUTE MAX I MUM RATINGS (TC = 25°C, unless otherwise specified)

Symbol	PARAMETER	Value	Unit
V DRM	Repetitive peak off-state voltage (Tj =25℃)	1200	V
VRRM	Repetitive peak reverse voltage (Tj=25℃)	1200	V
IT(AV)	Average on-state current (180° conduction angle)	20	A
IT(RMS)	RMS on-state current(full sine wave)	30	A
ITSM	Non repetitive surge peak on-state current (180° conduction angle, F=50Hz ，TC=85℃)	300	A
I2t	I2t for Fusing (t = 10 ms)	450	A2s
dI /dt	Critical rate of rise of on-state current (I =2 ×IGT, tr ≤ 100 ns)	50	A/μs
IGM	Peak Gate Current	4	A
PG(AV)	Average Gate Power dissipation	1	W
Tstg	Storage junction temperature range	-40 ~ 150	°C
TJ	Operating junction temperature range	-40 ~ 125	°C

ELECTRICAL CHARACTERISTICS (Tj = 25。C, unless otherwise specified)

Symbol	Test Condition	Value		Unit
Symbol	Test Condition	Min	Max	Unit
IGT	V = 12V R =33Ω		35	mA
VGT	V = 12V R =33Ω		1.3	V
VGD	VD=VDRM Tj=125℃	0.2		V
IL	IG= 1.2IGT		180	mA
IH	IT=500mA		120	mA
dV/dt	VD=2/3VDRM Gate Open Tj=125℃	500		V/μs
VTM	ITM =45A tp=380μs		1.7	V
IDRM	VD=VDRM VR=VRRM		20	μA
IRRM	VD=VDRM VR=VRRM		4	mA