YZPST-T171-320-10

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YZPST-T171-320-10.pdfDOWNLOAD ↘YANGZHOU POSITIONING TECH CO Power thyristor and diode parts 20200518.pdfDOWNLOAD ↘

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Features:

● Center amplifying gate configuration
● Compression bonded encapsulation
● High dV/dt Capability
● Stud type, thread inch or metric

Application

● Medium power switching
● DC power supplies

Maximum Ratings And Characteristics

Symbol	Parameter		Values	Units	Test Conditions
ON-STATE
ITAV	Mean on-state current		320	A	Sinewave,180° conduction,Tc=84oC
ITRMS	RMS value of on-state current		502	A	Nominal value
ITSM	Peak one cycle surge (non repetitive) current		7	kA	10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC
I2t	I square t		240	KA2s	8.3 msec and 10.0 msec
IL	Latching current		700	mA	VD = 24 V; RL= 12 ohms
IH	Holding current		300	mA	VD = 24 V; I = 2.5 A
VTM	Peak on-state voltage		1.6	V	ITM = 1005 A
di/dt	Critical rate of rise of on-state current	non-repetitive	1000	A/ms	Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM
di/dt	Critical rate of rise of on-state current	repetitive	-	A/ms
BLOCKING
VDRM VRRM	Repetitive peak off state voltage Repetitive peak reverse voltage		1000	V
VDSM VRSM	Non repetitive peak off state voltage Non repetitive peak reverse voltage		1100	V
IDRM IRRM	Repetitive peak off state current Repetitive peak reverse current		70	mA	Tj = 100 oC ,VRRM VDRM applied
dV/dt	Critical rate of voltage rise		500	V/ms	TJ=TJmax, linear to 80% rated VDRM
TRIGGEING
PG(AV)	Average gate power dissipation		3	W
PGM	Peak gate power dissipation		-	W
IGM	Peak gate current		6	A
IGT	Gate trigger current		250	mA	TC = 25 oC
VGT	Gate trigger voltage		2.5	V	TC = 25 oC
VGD	Gate non-trigger voltage		0.6	V	Tj = 125 oC
VT0			1.006	V	Tj = 125 oC
rT			0612	mΩ
SWITCHING
tq	Turn-off time		125	ms	ITM=320A, TJ=TJmax, di/dt=10A/μs, VR=100V,dv/dt=50V/μs, Gate 0V 100Ω, tp=500μs
td	Delay time		-	ms	Gate current A, di/dt=40A/μs, Vd=0.67%VDRM, TJ=25 oC

Thermal And Mechanical

Symbol	Parameter	Values	Units	Test Conditions
Tj	Operating temperature	-40~125	oC
Tstg	Storage temperature	-40~125	oC
R th (j-c)	Thermal resistance - junction to case	0.085	oC/W	DC operation ，Single sided cooled
R th (c-s)	Thermal resistance - case to sink	-	oC/W	Single sided cooled
P	Mounting force	-	Nm	± 10 %
W	Weight	440	g	about

OUTLINE

YZPST can provide Following Equivalent List of Phase Control Thyristors (Stud Type)

Type	IT(AV)	VTM/ITM		VDRM VRRM	IDRM IRRM	IGT	VGT	dv/dt	Tjm	F
Type	A	V/A		V	mA	mA	V	V/gs	°C	F
KP5	5	2.2	15	300-1600		100	2.0		125
KP20	20	2.2	60	300-1600	10	100	2.0		125	10Nm
KP50	50	2.2	150	300-1600	15	100	2.0	500	125	16Nm
KPI 00	100	2.8	300	100-2200	20	200	2.5	500	125	33Nm
KP200	200	2.8	600	100-2200	25	200	2.5	500	125	4KN
KP300	300	2.8	900	100-2200	30	200	2.5	500	125	7KN
KP500	500	3.0	1500	100-2200	45	300	3.0	500	125	10KN

For more information about Phase Control Thyristor please download the PDF file above named " YANGZHOU POSITIONING TECH CO Power thyristor and diode parts "

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