YZPST-S3530

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction  temperature range

Tstg

-40 ~ 150

℃

Operating junction temperature range

Tj

-40~ 125

℃

Repetitive peak off-state voltage (T =25℃)

VDRM

1600

V

Repetitive peak reverse voltage (T =25℃)

VRRM

1600

V

Non repetitive surge peak Off-state voltage

VDSM

VDRM +100

V

Non repetitive peak reverse voltage

VRSM

VRRM +100

V

RMS on-state current (T = 110℃)

IT(RMS)

35

A

Non repetitive surge peak on-state current

(180° conduction angle, F=50Hz)

ITSM

300

A

Average on-state current (180° conduction angle)

IT(AV)

23

A

I2t value for fusing (tp= 10ms)

I2t

450

A2 S

Critical rate of rise of on-state current

(I =2×IGT, tr ≤ 100 ns)

dI/dt

50

A/μS

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

Thermal Resistances

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (DC)

2.5

℃/W

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Symbol

Test Condition

Value

Unit

IGT

V = 12V R = 140Ω

MAX.

30

mA

VGT

MAX.

1.3

V

VGD

VD=VDRM Tj= 125℃

MIN.

0.2

V

IL

IG= 1.2IGT

MAX.

160

mA

IH

IT=500mA

MAX.

120

mA

dV/dt

VD=2/3VDRM Gate Open  Tj=125℃

MIN.

500

V/μs