YZPST-RGN150C066

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P/N:YZPST-RGN150C066

150V Super-GaN FET

150V, 230A，3. 2mΩ, Super-GaN FET in WLCSP 3. 5x2. 13

Features

GaN-on-Silicon E-mode HEMT technology

Very low gate charge

Ultra-low on resistance Very small package size

Zero reverse recovery charge

Applications

Synchronous rectification Class-D audio

High frequency DC-DC converter Communication base station

Motor driver

Pin information

Maximum ratings at Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	MAX	UNIT
VDS	Drain-to-Source Voltage (Continuous)	150	V
ID	Continuous current	60	A
ID	Pulsed (25˚C, TPULSE = 300 µs)	230	A
VGS	Gate-to-Source Voltage	6	V
VGS	Gate-to-Source Voltage	-4	V
TJ	Operating Temperature	-40 to 150	˚C
TSTG	Storage Temperature	-40 to 150	˚C

Thermal characteristics

SYMBOL	PARAMETER	TYP	UNIT
RθJC	Thermal Resistance, Junction to Case	0.3	˚C/W
RθJB	Thermal Resistance, Junction to Board	1.5	˚C/W
RθJA	Thermal Resistance, Junction to Ambient 1	33	˚C/W

Electric characteristics at Tj = 25 °C unless otherwise specified. Static characteristics

SYMBOL	PARAMETER	MIN	TYP	MAX	UNIT	TEST CONDITIONS
BVDSS	Drain-to-Source Voltage	150	-	-	V	VGS = 0 V, ID = 400 μA
IDSS	Drain Source Leakage	-	4	28	µA	VGS = 0 V, VDS =80 V
IGSS	Gate-to-Source Forward Leakage(25°C)	-	1.2	23	µA	VGS = 5 V
	Gate-to-Source Forward Leakage(125°C)		0.1	2	mA	VGS = 5 V
	Gate-to-Source Reverse Leakage	-	0.1	0.5	µA	VGS = -4 V
VGS(TH)	Gate Threshold Voltage	0.8	1.1	2.5	V	VDS = VGS , ID = 9 mA
RDS(on)	Drain-Source On-state Resistance	-	2.5	3.2	mΩ	VGS = 5 V, ID = 25 A
VSD	Source-Drain Forward Voltage	-	1.5	-	V	IS = 0.5 A, VGS = 0 V

Dynamic characteristics

SYMBOL	PARAMETER	MIN	TYP	MAX	UNIT	TEST CONDITIONS
CISS	Input Capacitance	-	1000	-	pF	VGS = 0 V, VDS = 50 V
COSS	Output Capacitance	-	460	-		VGS = 0 V, VDS = 50 V
CRSS	Reverse Transfer Capacitance	-	8.2	-		VGS = 0 V, VDS = 50 V
COSS(ER)	Energy Related COSS	-	700	-		VGS = 0 V, VDS = 0 V to 50 V
COSS(TR)	Time Related COSS	-	1020	-		VGS = 0 V, VDS = 0 V to 50 V
RG	Gate resistance	-	2.2	-	Ω	f = 5 MHz, open drain
QG	Total Gate Charge 1	-	9.2	12	nC	VGS = 5 V, VDS = 50 V, ID= 25 A
QGS	Gate to Source Charge	-	1.9	-		VDS = 0 V to 50 V, ID = 25 A
QGD	Gate to Drain Charge	-	1.7	-		VDS = 0 V to 50 V, ID = 25 A
QG(TH)	Gate Charge at Threshold	-	1.1	-		VDS = 0 V to 50 V, ID = 25 A
QOSS	Output Charge	-	50	-		VGS = 0 V, VDS = 0 V to 50 V