YZPST-R03N120TP
Tip: include the part number, target voltage/current and application environment.
P/N: YZPST-R03N120TP
1200VN-chPlanar MOSFET
General Features
RoHS Compliant
RDS(ON),typ.=6Ω@VGS=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
Applications
Adaptor
Charger
SMPS Standby Power
Lead Free package and Finish
BVDSS | RDS(ON),typ. | ID |
1200V | 6Ω | 3.0A |
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol | Parameter | R03N120TP | Unit |
VDSS | Drain-to-Source Voltage | 1200 |
V |
VGSS | Gate-to-Source Voltage | ±30 | |
ID | Continuous Drain Current | 3.0 |
A |
IDM | Pulsed Drain Current at VGS=10V | 12 | |
EAS | Single Pulse Avalanche Energy | 100 | mJ |
dv/dt | Peak Diode Recovery dv/dt[3] | 5.0 | V/ns |
PD | Power Dissipation | 75 | W |
Derating Factor above 25℃ | 0.6 | W/℃ | |
TL | Soldering Temperature Distance of 1.6mm from case for 10 seconds | 300 |
℃ |
TJ& TSTG | Operating and StorageTemperatureRange | -55 to 150 |
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol | Parameter | R03N120TP | Unit |
RθJC | Thermal Resistance, Junction-to-Case | 1.67 |
℃/W |
RθJA | Thermal Resistance, Junction-to-Ambient | 62 |
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