YZPST-MJD31C
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Silicon NPN Power Transistors
P/N: YZPST-MJD31C
DESRCRIPTION:
The MJD31C is Silicon NPN power transistors ，designed for medium power linear switching applications.
ABSOLUTE MAX I MUM RATINGS
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 100 | V |
VCEO | Collector-Emitter Voltage | 100 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Continuous Collector Current | 3 | A |
ICM | Collector current-Pulse | 5 | A |
IB | Base Current | 1 | A |
PTOT | Total dissipation at Tcase=25 ℃ | 15 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature Range | -55〜 150 | ℃ |
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Symbol | Parameter | Test Condition | Value | Unit | ||
Min | Type | Max | ||||
ICEO | Collector Cutoff Current | VCE= 60 V |
|
| 0.3 | mA |
IEBO | Emitter Cutoff Current | VEB= 5 V |
|
| 1 | mA |
VCEO（SUS） | Collector-Emitter Sustaining Voltage | IC= 30mA | 100 |
|
| V |
VCEsat | Collector-Emitter Saturation Voltage | IC=3A IB=0.375A |
|
| 1.2 | V |
VBE | Base-Emitter On Voltage | IC=3A ; VCE=4V |
|
| 1.8 | V |
hFE- 1 | DC current gain | IC= 1A ; VCE=4V | 25 |
|
|
|
hFE-2 | DC current gain | IC=3A ; VCE=4V | 10 |
| 50 |
|
fT | Transiton frequency | IC=0.5A ; VCE= 10V | 3 |
|
| MHz |
PACKAGE MECHANICAL DATA
Power semiconductor devices, protection components and industrial power solutions.
