YZPST-MJE2955T

Product summary and primary technical information will be loaded from the product database.

✓Technical product information✓Application-focused selection support✓Catalog and requirement-based inquiry

EmailTechnical sales

PhoneContact team

REQUEST A TECHNICAL QUOTE ↗

Tip: include the part number, target voltage/current and application environment.

DOCUMENT CENTER

Downloads & technical files

YZPST-MJE2955T-220-英文版.pdfDOWNLOAD ↘

PNP SILICON POWER TRANSISTORS MJE2955T

DESRCRIPTION:
The MJE2955T is an PNP transistor, which is complementary to MJE3055T and is used in audio power amplification and power conversion circuits.
Package form: TO-220

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-70	V
VCEO	Collector-Emitter Voltage	-60	V
VEBO	Emitter-Base Voltage	-5	V
IC	Continuous Collector Current	-10	A
PTOT	Total dissipation at Tcase=25 ℃	75	W
T_j	Junction Temperature	150	℃
T_stg	Storage Temperature Range	-55-150	℃

● ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol	Parameter	Test Condition	Value			Unit
Symbol	Parameter	Test Condition	Min	Type	Max	Unit
VCBO	Collector-Base Breakdown Voltage	I_C= -10mA	-70			V
VCEO	Collector-Emitter Breakdown Voltage	I_C= -200mA	-60			V
VEBO	Emitter-Base Breakdown Voltage	I_E= -10mA	- 5			V
ICBO	Collector Cutoff Current	V_CB= -70V			1	mA
IEBO	Emitter Cutoff Current	V_EB= -5V			5	mA
hFE	DC Current Gain	I_C= -4A,V_CE= -4V	20		100
VCE(sat)	Collector-Base Breakdown Voltage	I_C= -4A,I_B= -0.4A			-1.1	V
VBE(sat)	Base-Emitter Saturation Voltage	I_C= -4A,I_B= -4A			-1.8	V
f_T	Transition Frequency	VCE=10V, IC=0.5A，f=1MHZ	2			MHZ
a：Pulse Test，tp ≤300us，δ≤2%