





YZPST-2SA940
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PNP Type Transistor 2SA940
DESRCRIPTION:The 2SA940 is a PNP type transistor, used as a power switch tube for electronic ballasts and electronic energy-saving lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, high breakdown voltage, low reverse leakage, etc.

ABSOLUTE MAX I MUM RATINGS
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | -150 | V |
VCEO | Collector-Emitter Voltage | -150 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Continuous Collector Current | -1.5 | A |
PTOT | Total dissipation at Tcase=25 ℃ | 25 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Stora-1.5ge Temperature Range | -55〜150 | ℃ |
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Symbol | Parameter | Test Condition | Value | Unit | ||
Min | Type | Max | ||||
V(BR)CBO | Collector-Base Breakdown Voltage | IC=-1mA | -150 |
|
| V |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC=-1mA | -150 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE=-1mA | - 5 |
|
| V |
ICBO | Collector Cutoff Current | VCB=-150V, IE=0 |
|
| -5 | μA |
ICEO | Collector Cutoff Current | VCE=-150V, IC=0 |
|
| -5 | μA |
IEBO | Emitter Cutoff Current | VEB=-5V, IC=0 |
|
| -5 | μA |
hFE | DC Current Gain | VCE=-10V, IC=-0.5A | 40 |
| 140 |
|
VCE(sat) | Collector-Base Breakdown Voltage | IC=-0.5A, IB=-50mA |
|
| -0.85 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC=-0.5A, IB=-50mA |
|
| -1.5 | V |
a: tp≤300μs,δ≤2% | ||||||
PACKAGE MECHANICAL DATA

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