YZPST-13005D

Product summary and primary technical information will be loaded from the product database.

✓Technical product information✓Application-focused selection support✓Catalog and requirement-based inquiry

EmailTechnical sales

PhoneContact team

REQUEST A TECHNICAL QUOTE ↗

Tip: include the part number, target voltage/current and application environment.

DOCUMENT CENTER

Downloads & technical files

YZPST-13005D-220&126SD-英文版.pdfDOWNLOAD ↘

NPN SILICON POWER TRANSISTORS 13005D
●DESRCRIPTION:
The 13005D is an NPN transistor used in electronic ballasts and electronic energy saving -lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, high breakdown voltage and low reverse leakage.

YZPST-13005D-1

●ABSOLUTE MAX I MUM RATINGS

Symbol	Parameter		Value	Unit
VCBO	Collector-Base Voltage		700	V
VCEO	Collector-Emitter Voltage		400	V
VEBO	Emitter-Base Voltage		9	V
I_C	Continuous Collector Current		3	A
Icm	Collector Pulse Current（Tp＜5ms）		6	A
PTOT	Total dissipation at Tcase=25 ℃	TO-126SD	50	W
PTOT	Total dissipation at Tcase=25 ℃	TO-220	75	W
T_j	Junction Temperature		150	℃
T_stg	Storage Temperature Range		-55—150	℃

●ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol	Parameter	Test Condition	Value			Unit
Symbol	Parameter	Test Condition	Min	Type	Max	Unit
ICBO	Collector Cutoff Current	V_CB= 700 V，IE=0			0.1	mA
ICEO	Base Cutoff Current	V_CE= 400 V，Ic=0			0.1	mA
IEBO	Emitter Cutoff Current	V_EB= 9 V，I_C=0			0.1	mA
VCBO	Collector-Base Breakdown Voltage	I_C= 0.1mA	700			V
VCEO	Collector-Emitter Breakdown Voltage	I_C= 0.1mA	400			V
VEBO	Emitter-Base Breakdown Voltage	I_B= 0.1mA	9			V
hFE	DC Current Gain	I_C= 0.5A,V_CE= 5V	15		35
a VCE sat	Collector-Base Breakdown Voltage	I_C= 2A,I_B= 0.5A			1	V
a VBE sat	Base-Emitter Saturation Voltage	I_C= 2A,I_B= 0.5A			1.5	V
ts	Storage Time	UI9600，Ic=0.5A	2		7	us
f_T	Transition Frequency	VCE=10V，IC=0.2A F=1MHz	5			MHz
a：Pulse Test，tp ≤300us，δ≤2%