YZPST-G100HF120D1 (YZPST-2MBI100XAA-120-50)

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1200V 100A IGBT Module P/N:YZPST-G100HF120D1 (YZPST-2MBI100XAA-120-50)

Features：
1200V100A,VCE(sat)(typ.)=3.0V Low inductive design
Lower losses and higher energy
Ultrafast switching speed
Excellent short circuit ruggedness
General Applications：
Auxiliary lnverter
Inductive Heating and Welding

UPS Systems

Absolute Maximum Ratings of IGBT

VCES	Collector to Emitter Voltage		1200	V
VGES	Continuous Gate to Emitter Voltage		±30	V
		TC = 25°C	200
IC	Continuous Collector Current	TC = 100°C	100	A
ICM	Pulse Collector Current	TJ = 150°C	200	A
PD	Maximum Power Dissipation (IGBT)	TC = 25°C,	430	W
tsc			> 10	µs
	Short Circuit Withstand Time		> 10	µs
	Maximum IGBT Junction Temperature		150	°C
TJ
TJOP
TJOP	Maximum Operating Junction Temperature Range		-40 to +150	°C
Tstg	Storage Temperature Range		-40 to +125	°C

VRRM	Repetitive Peak Reverse Voltage Preliminary Data		1200	V
		TC = 25°C	200
IF	Diode Continuous Forward Current	TC = 100°C	100	A
IFM	Diode Maximum Forward Current		200	A

Absolute Maximum Ratings of Freewheeling Diode

VRRM	Repetitive Peak Reverse Voltage Preliminary Data		1200	V
		TC = 25°C	200
IF	Diode Continuous Forward Current	TC = 100°C	100	A
IFM	Diode Maximum Forward Current		200	A

Switching Characteristics of IGBT

td(on)			TJ = 25°C	30
	Turn-on Delay Time					ns


			TJ = 125°C	35
			TJ = 25°C	50
tr	Turn-on Rise Time		TJ = 125°C	55		ns
			TJ = 25°C	380
td(off)	Turn-off Delay Time		TJ = 125°C	390		ns
			TJ = 25°C	110
tf	Turn-off Fall Time		TJ = 125°C	160		ns
		VCC = 600V	TJ = 25°C	4.6
Eon	Turn-on Switching Loss	IC = 100A	TJ = 125°C	5.7		mJ
		RG = 5.6Ω	TJ = 25°C	3.1
Eoff	Turn-off Switching Loss	VGE = ±15V	TJ = 125°C	5.1		mJ
Qg	Total Gate Charge	Inductive Load	TJ = 25°C	870		nC
Rgint	Integrated gate resistor	f = 1M;	TJ = 25°C	1.9		Ω
Rgint	Integrated gate resistor	Vpp = 1V	TJ = 25°C	1.9		Ω
Cies	Input Capacitance		TJ = 25°C	8
Cies	Input Capacitance	VCE = 25V	TJ = 25°C	8
Coes	Output Capacitance	VGE = 0V	TJ = 25°C	1.35		nF
Cres	Reverse Transfer	f = 1MHz	TJ = 25°C	0.81
Cres	Capacitance		TJ = 25°C	0.81
RθJC	Thermal Resistance, Junction-to-Case (IGBT)				0.29	°C/W