YZPST-T4150
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P/N: YZPST-T4150 40A TRIACS
FEATURES
Glass Passivated Junctions
High voltage and surge capability
Low Thermal Resistance and Durability
Triggering in three quadrants
APPLICATIONS
Static relays
Heating regulation
In-duction motor starting circuits
Phase control operation in light dimmers
Motor speed controllers
ABSOLUTE MAXIMUM RATINGS | |||
Parameter | Symbol | Value | Unit |
Storage junctiontemperature range | Tstg | -40~ 150 | ℃ |
Operating junction temperature range | Tj | -40~ 125 | ℃ |
Repetitive peak off-state voltage (T =25℃) | VDRM | 800/1200 | V |
Repetitive peak reverse voltage (T =25℃) | VRRM | 800/1200 | V |
RMS on-state current(TC=80℃) | IT(RMS) | 40 | A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 400 | A |
I2t value for fusing (tp= 10ms) | I2t | 800 | A2 S |
Critical rate of rise of on-state current(I =2×IGT) | di/dt | 50 | A/μS |
Peak gate current | IGM | 8 | A |
Peakgate power dissipation | PGM | 40 | W |
Average gate power dissipation | PG(AV) | 1 | W |
Thermal Resistances | |||
Symbol | Parameter | Value | Unit |
Rth(j-c) | Junction to case | 0.85 |
℃/W |
Rth(j-a) | Junction to ambient | 50 | |
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) | |||||
Symbol | Test Condition | Quadrant |
| Value | Unit |
IGT |
| Ⅰ Ⅱ Ⅲ | MAX. | 50 | mA |
VGT | Ⅰ Ⅱ Ⅲ | MAX. | 1.3 | V | |
VGD | VD=VDRMTj=125℃ | Ⅰ Ⅱ Ⅲ | MIN. | 0.2 | V |
IL | IG= 1.2IGT | Ⅰ-Ⅲ |
MAX. | 100 |
mA |
Ⅱ | 160 | ||||
IH | IT=500mA | MAX. | 80 | mA | |
dV/dt | VD=2/3VDRMGate Open Tj=125℃ | MIN. | 1000 | V/μs | |
TO-218X Package Mechanical Data
Power semiconductor devices, protection components and industrial power solutions.
