YZPST-M2G0080120D

✓Technical product information✓Application-focused selection support✓Catalog and requirement-based inquiry

EmailTechnical sales

PhoneContact team

REQUEST A TECHNICAL QUOTE ↗

Tip: include the part number, target voltage/current and application environment.

DOCUMENT CENTER

Downloads & technical files

9b227522cc757c12.0--SCTW40N120G2V-R090.pdfDOWNLOAD ↘

1200V N-Channel Silicon Carbide Power MOSFET SiC MOSFET

Features
Optimized package with separate driver source pin
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel
RoHS compliant
Benefits
Higher System Efficiency
Reduce cooling requirements
Increased power density
Enabling higher frequency
Minimize gate ringing
Reduction of system complexity and cost
Applications
Switch Mode Power Supplies
DC/DC converters
Solar Inverters
Battery Chargers
Motor Drives
Power MOSFET

Maximum Ratings (Tc = 25 °C unless otherwise specified )

Symbol	Parameter	Value	Unit	Test Conditions	Note
f^DSmax	Drain-Source Breakdown Voltage	1200	V	海=0 V, /d=100 卩A
Id	Continuous Drain Current	42	A	4s=20 V Tc=25 °C	Fig. 18
Pd	Power Dissipation	208	W	*=25 °C	Fig. 19
FgS,op	Recommend Gate Source Voltage	-0.25	V
J^Smax	Maximum Gate Source Voltage	-0.4	V	AC (f>lHz)	Note 1
Tj, Tstg	Operating Junction and Storage Temperature Range	-55 to	°C
Tj, Tstg	Operating Junction and Storage Temperature Range	175	°C
7l	Soldering Temperature	260	°C

Electrical Characteristics

Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
Static
BVds	Drain-Source Breakdown Voltage	1200	-	-	V	4s=0 V, Zd=100 卩A
A)ss	Zero Gate Voltage Drain Current	—	11	100		丹s=1200 V Pgs=0 V
Igss	Gate-Source Leakage	—	10	250	nA	4s=20 V
FGS(th)	Gate-Source Threshold Voltage	2	—	4	V	Id=5 mA,	Fig. 11
&DS(on)	Drain-Source On-Resistance	—	78	100	mQ	国=20 V, Zd=20 A	Fig. 6
Dynamic
Ciss	Input Capacitance	—	1128		PF	4s=0 V,比s=1000 V	Fig. 17
C^oss	Output Capacitance	—	86			f^l.OMHz,瓜=25 mV
Crss	Reverse Transfer Capacitance	—	5
Eoss	Coss Stored Energy	-	44		卩J		Fig. 16
Qs	Total Gate Charge	—	52		nC	moo V	Fig. 12
figs	Gate-Source Charge	-	17			血=20 A
Qgd	Gate-Drain Charge	-	15			Fgs=-5/+20 V
td(cn)	Turn-on Delay Time	—	41		ns	丹 s=800 V
tr	Turn-on Rise Time	-	21			Fgs=-5/+20 V
	Turn-off Delay Time	—	48			Id=20A
tf	Turn-off Fall Time	—	16			Ro(ext)=2.5 Q
RG(int)	Internal Gate Resistance	-	4		n	E.O MHz, Vac=25 mV

Body Diode Characteristics ,at Tj=25°C, unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
Is	Continuous Diode Froward Current	-	-	42	A		Note 1
	Diode Froward Voltage	-	4	-	V	Kjs=0 V, Zs=10 A	Fig. 8,
	Diode Froward Voltage	-	4	-	V	Kjs=0 V, Zs=10 A	9,10
trr	Reverse Recovery Time	-	26	-	ns	1s=20 A,既)s=800 V
0r	Reverse Recovery Charge	-	163	-	nC	%s=・5 V	Note 1
Zrrm	Peak Reverse Recovery Current		12		A	di/dt=2100 A/us