PRODUCT VISUAL01 / GALLERY
POWER COMPONENT
YZPST-T1205
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MAIN FEATURES
Symbol | Value | Unit |
IT(RMS) | 12 | A |
VDRM VRRM | 600 | V |
VTM | 1.55 | V |
ABSOLUTE MAXIMUM RATINGS
Parameter | Symbol | Value | Unit |
Storage junction temperature range | Tstg | -40 ~150 | ℃ |
Operating junction temperature range | Tj | -40~125 | ℃ |
Repetitive peak off-state voltage (T =25℃) | VDRM | 600 | V |
Repetitive peak reverse voltage (T =25℃) | VRRM | 600 | V |
RMS on-state current | IT(RMS) | 12 | A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 120 | A |
I2t value for fusing (tp=10ms) | I2t | 78 | A2S |
Critical rate of rise of on-state current (I =2×IGT) | dI/dt | 50 | A/μS |
Peak gate current | IGM | 4 | A |
Average gate power dissipation | PG(AV) | 1 | W |
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Power semiconductor devices, protection components and industrial power solutions.
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