YZPST-BTA212X-600D

Product summary and primary technical information will be loaded from the product database.

✓Technical product information✓Application-focused selection support✓Catalog and requirement-based inquiry

EmailTechnical sales

PhoneContact team

REQUEST A TECHNICAL QUOTE ↗

Tip: include the part number, target voltage/current and application environment.

DOCUMENT CENTER

Downloads & technical files

YZPST-BTA212.pdfDOWNLOAD ↘

BTA212 12A Triacs

YZPST-BTA212X-600D

DESCRIPTION:

With high ability to withstand the shock loading of Large current, BTA212 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, It provides a rated insulation voltage of 2500 VRMS complying with UL standards

MAIN FEATURES:

symbol	value	unit
IT(RMS)	12	A
VDRM/VRRM	600/800/1200	V
VTM	≤1.5	V

ABSOLUTE MAXIMUM RATINGS:

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (Tj=25℃)	VDRM	600/800/1200	V
Repetitive peak reverse voltage (Tj=25℃)	VRRM	600/800/1200	V
RMS on-state current	IT(RMS)	12	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	120	A
I2t value for fusing (tp=10ms)	I2t	78	A2s
Critical rate of rise of on-state current(IG=2 × IGT)	dI/dt	50	A/ μs
Peak gate current	IGM	4	A
Average gate power dissipation	PG(AV)	1	W
Peak gate power	PGM	5	W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

3 Quadrants：

Parameter				Value
Parameter	Test Condition	Quadrant		TW	SW	CW	BW	Unit
IGT	VD=12V,			5	10	35	50	mA
VGT	RL=33Ω	Ⅰ- Ⅱ-Ⅲ	MAX	1.5				V
VGD	VD=VDRM	Ⅰ- Ⅱ-Ⅲ	MIN	0.2				V
IH	IT=100mA		MAX	5	10	40	60	mA
		Ⅰ-Ⅲ		20	30	50	70
IL	IG=1.2IGT	Ⅱ	MAX	25	40	60	80	mA
	VD=2/3VDRM Tj=125℃ Gate open
dV/dt	VD=2/3VDRM Tj=125℃ Gate open		MIN	100	200	500	1000	V/ µs

4 Quadrants：

Parameter				Value
Parameter	Test Condition	Quadrant		C	B	Unit
		Ⅰ- Ⅱ-Ⅲ		25	50	mA
IGT	VD=12V,	Ⅳ		50	70	mA
VGT	RL=33Ω	ALL	MAX	1.5		V
VGD	VD=VDRM	ALL	MIN	0.2		V
IH	IT=100mA		MAX	40	60	mA
		Ⅰ-Ⅲ- Ⅳ		50	70
IL	IG=1.2IGT	Ⅱ	MAX	70	90	mA
	VD=2/3VDRM Tj=125℃ Gate open
dV/dt	VD=2/3VDRM Tj=125℃ Gate open		MIN	200	500	V/ µs