YZPST-STW20NM60
Tip: include the part number, target voltage/current and application environment.
Downloads & technical files
Features
High ruggedness
Low RDS(ON) (Typ 0.22Ω)@VGS=10V
Low Gate Charge (Typ 84nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: UPS, Charge, PC Power ,Inverter
This power MOSFET is produced with advanced technology of Promising Chip.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Symbol | Parameter | Value | Unit |
VDSS | Drain to source voltage | 600 | V |
ID | Continous drain current(@Tc=25℃) | 20* | A |
Continous drain current(@Tc=100℃) | 12* | A | |
IDM | Drain current pulsed | 78 | A |
VGS | Gate to source voltage | ±30 | V |
EAS | Single pulsed avalanche energy | 1284 | mJ |
EAR | Repetitive pulsed avalanche energy | 97 | mJ |
dv/dt | Peak diode recovery dv/dt | 5 | V/ns |
PD | Total power dissipation(@Tc=25℃) | 42.3 | W |
Derating factor above 25℃ | 0.32 | W/℃ | |
TSTG,TJ | Operating junction temperature & storage temperature | -55~+150 | ℃ |
TL | Maximum lead temperature for soldering purpose,1/8 from case for 5second | 300 | ℃ |
*Drain current is limited by junction temperature Thermal characteristics:
Symbol | Parameter | Value | Unit |
Rthjc | Thermal resistance , Junction to case | 3.1 | ℃/W |
Rthja | Thermal resistance , Junction to ambient | 49 | ℃/W |
Source to drain diode ratings characteristics:
Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
Is | Continuous source current |
Integral reverse p-n Junction
diode in the MOSFET
| 20 | A | ||
ISM | Pulsed source current | 80 | A | |||
VSD | Diode forward voltage drop | IS =20A VGS = 0V | 1.3 | V | ||
trr | Reverse recovery time |
IS =20A VGS = 0V
dIF/dt = 100A/us
| 494 | ns | ||
Qrr | Reverse recovery charge | 7.3 | uC |
YZPST can provide Following List of MOSFET
| Rds(on) mΩ(typ) @Vgs= | Qg | ||||||||||||
| MPN | Package | Type | VDS (V) | Vgs | Ids | Pd | Vgs(th) | (nC) | Qgs | Qgd | |||
| （Type） | (V) | (A) | (W) | max (V) | 10V 4.5V 2.5V (4.5 | (nC) | (nC) | ||||||
| 2301 | SOT23 | P | -20V | ±12 | -3A | 1W | -1V | 64mΩ | 89mΩ | 3.3 | 0.7 | 1.3 | |
| 2302 | SOT23 | N | 20V | ±10 | 2.9A | 1W | 1.2V | 30mΩ | 37mΩ | 4 | 0.65 | 1.2 | |
| 2305 | SOT23 | P | -20V | ±12 | -4.8A | 1.7W | -1V | 45mΩ | 60mΩ | 7.8 | 1.2 | 1.6 | |
| 3400 | SOT23 | N | 30V | ±12 | 5.8A | 1.4W | 1.4V | 28mΩ | 31mΩ | 45mΩ | 9.5 | 1.5 | 3 |
| 3401 | SOT23 | P | -30V | ±20 | -4.2A | 1.2W | -1.3V | 50mΩ | 64mΩ | 95mΩ | 9.5 | 2 | 3 |
| 10N03 | SOP8 | N | 30V | ±20 | 10A | 2.5W | 3V | 7.5mΩ | 13 | 5.5 | 3.5 | ||
| 20N03 | TO-252 | N | 30V | ±20 | 20A | 60W | 3V | 28mΩ | 15 | 2.9 | 3.2 | ||
| 30P03 | SOP8 | P | 30V | ±20 | -30A | 60W | 3V | ||||||
| 50N03 | TO-252 | N | 30V | ±20 | 50A | 60W | 3V | 5.9mΩ | 23 | 7 | 4.5 | ||
| 60N03 | TO-252 | N | 30V | ±20 | 60A | 46.3W | 1.8 V | 3.3mΩ | 20 | 6 | 2 | ||
| 80N03 | TO-252 | N | 30V | ±20 | 80A | 83W | 4.8mΩ | 51 | 14 | 11 | |||
| 100N03 | TO-252 | N | 30V | ±20 | 100A | 110W | 3V | 4mΩ | 100 | 25 | 45 | ||
| 60N04 | TO-252 | N | 40V | ±20 | 60A | 65W | 1.9V | 8.5mΩ | 12.5mΩ | 29 | 4.5 | 6.4 | |
| 4606 | SOP-8 | N+P | |||||||||||
| 3N06 | SOT-223 | N | 60V | ±20 | 3A | 1.7W | 1.4V | 105mΩ （MAX） | 125mΩ （MAX） | 6 | 1 | 1.3 | |
| 15P06 | TO-252 | P | |||||||||||
| 20N06 | TO-252 | N | 60V | ±20 | 20A | 40W | 3V | 37mΩ | 12 | 4.1 | 4.5 | ||
| 25P06 | TO-252 | P | -60V | ±20 | -25A | 90W | -3.5V | 45mΩ | 46 | 9.5 | 10.5 | ||
| 30N06 | TO-220/F | N | 60V | ±20 | 30A | 120W | 4V | 19mΩ | 34 | 9.6 | 10.5 | ||
| 50N06 | TO-252 | N | 60V | ±20 | 50A | 120W | 4V | 19mΩ | 34 | 9.6 | 10.5 | ||
| 110N06 | TO-220/F | N | 60V | ±20 | 110A | 120W | 2V | 5.2mΩ | 113 | 14 | 54 | ||
| G1002 | TO-92 | N | 100V | ±20 | 2A | 1.1W | 2.5V | 185mΩ | 5.2 | 0.75 | 1.4 | ||
| 5N10 | SOT223 | N | 100V | ±20 | 5A | 3W | 3V | 135mΩ | 16 | 3.2 | 4.7 | ||
| 14N10 | TO-252 | N | 100V | ±20 | 14A | 28W | 2.6V | 85mΩ | 11 | 1.9 | 2.8 | ||
| 30N10 | SOP8 | N | 100V | ±20 | 30A | 85W | 2.5V | 24mΩ | 39 | 8 | 12 | ||
| 11N10 | TO-252 | N | 100V | ±20 | 11A | 28W | 2.6V | 85mΩ | 11 | 1.9 | 2.8 | ||
| 12P10 | TO-252 | P | -100V | ±20 | -12A | 40W | -3V | 170mΩ | 25 | 5 | 7 | ||
| 5N20 | TO-252 | N | 200V | ±20 | 5A | 30W | 2.5V | 520mΩ | 12 | 2.5 | 3.8 | ||
| 2N60 | TO-252/251 | N | 600V | ±30 | 2A | 45W | 4V | 5Ω | 9 | 1.6 | 4.3 | ||
| 2N60 | TO- | N | 600V | ±30 | 2A | 45W | 4V | 5Ω | 9 | 1.6 | 4.3 | ||
| 2N65 | TO-252 | N | 650V | ±30 | 2A | 45W | 4V | 5Ω | 9 | 1.6 | 4.3 | ||
| 4N60 | TO- | N | 600V | ±30 | 4A | 100W | 4V | 3Ω | 5 | 2.7 | 2 | ||
| 4N60 | TO-252 | N | 600V | ±30 | 4A | 33W | 4V | 3Ω | 5 | 2.7 | 2 | ||
| 5N60 | TO-220 | N | 600V | ±30 | 5A | 100W | 4V | 2.5Ω | 16 | 3 | 7.2 | ||
| 6N65 | TO- | N | 650V | ±30 | 6A | 140W | 4V | 1.8Ω | 29 | 7 | 14.5 | ||
| 8N60 | TO- | N | 600V | ±30 | 8A | 140W | 4V | 1.0Ω | 45 | 6.8 | 18 | ||
| 12N65 | TO- | N | 650V | ±30 | 12A | 4V | 0.8Ω | 42 | 8.6 | 21 | |||
| IRF640 | TO- | N | 200V | ±30 | 18A | 43W | 4V | 0.14Ω | 40 | 6 | 22 | ||
| IRF740 | TO- | N | 400V | ±30 | 10.5A | 45.5W | 4V | 0.43Ω | 30 | 4 | 15 | ||
| IRF840 | TO- | N | 500V | ±30 | 9A | 45.5W | 4V | 0.65Ω | 30 | 4 | 15 | ||
Power semiconductor devices, protection components and industrial power solutions.
