TO-252 R100P11A 100V P-Channel Trench Power MOSFET
Tip: include the part number, target voltage/current and application environment.
Parameter | Value | Unit |
VDS | -100 | V |
RDS(ON)_TYP | 156 | mΩ |
ID | -11 | A |
QG | 42.5 | nC |
Symbol | Parameter | Limit | Unit |
VDS | Drain-Source Voltage (VGS=0V) | -100 | V |
VGS | Gate-Source Voltage (VDS=0V) | ±20 | V |
ID | Drain Current-Continuous(TC=25℃) | -11 | A |
Drain Current-Continuous(TC=100℃) | -6.7 | A | |
IDM (pluse) | Drain Current-Continuous@ Current-Pulsed (Note 1) | -44 | A |
PD | Maximum Power Dissipation(TC=25℃) | 48 | W |
Maximum Power Dissipation(TC=100℃) | 19 | W | |
EAS | Avalanche energy (Note 2) | 72 | mJ |
TJ, TSTG | Operating Junction and Storage Temperature Range | -55 To 150 | ℃ |
Table 2. Thermal Characteristic
Symbol | Parameter | Typ | Max | Unit |
RθJC | Thermal Resistance, Junction-to-Case |
| 2.6 | ℃/W |
TO-252 Package Information
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Power semiconductor devices, protection components and industrial power solutions.
