







YZPST-BYV28-200
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P/N:YZPST-BYV28-200
SINTERED GLASS JUNCTION
ULTRAFAST AVALANCHE RECTIFIER
VOLTAGE :200V CURRENT: 3.5A
FEATURE
Glass passivated
High maximum operating temperature Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
MECHANICAL DATA
Case: SOD-64 sintered glass case
Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C
Polarity: color band denotes cathode end Mounting position: any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25。C, unless otherwise stated) | ||||
| SYMBOL | BYV28-200 | units | |
Maximum Recurrent Peak Reverse Voltage | VRRM | 200 | V | |
Maximum RMS Voltage | VRMS | 140 | V | |
Maximum DC blocking Voltage | VDC | 200 | V | |
Reverse avalanche breakdown voltage at IR = 0.1 mA | V(BR)R | 220min | V | |
Maximum Average Forward Rectified Current 3/8” lead length at Ttp =85。C | IFAV | 3.5 | A | |
Non-repetitive Peak Forward Current at t=10ms half sine wave | IFSM | 90 | A | |
Maximum Forward Voltage at Forward Current 3.5A | VF | 1.02 | V | |
Non-repetitive peak reverse avalanche energy (Note 1) | ERSM | 20 | mJ | |
Maximum DC Reverse Current at rated DC blocking voltage | Ta =25。C Ta =165。C | IR | 5.0 150.0 | μA |
Maximum Reverse Recovery Time (Note 2) | Trr | 25 | nS | |
Diode Capacitance (Note 3) | Cd | 190 | pF | |
Typical Thermal Resistance (Note 4) | Rth(ja) | 75 | K/W | |
Storage and Operating Junction Temperature | Tstg, Tj | -65 to +175 | 。C | |
Note: 1. R=400mA; Tj=Tjmax prior to surge; inductive load switched off 2. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 3. Measured at 1.0 MHz and applied reverse voltage of 0Vdc 4. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick; thickness of Cu-layer≥40 μm | ||||
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