.jpg)
.jpg)
.jpg)
YZPST-IMW120R045M1(YZPST-RM040120T)
Tip: include the part number, target voltage/current and application environment.
Downloads & technical files
YZPST-IMW120R045M1(YZPST-RM040120T)\
SiC MOSFET
Features
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Easy to parallel
Simple to drive
RoHS Compliant
Benefits
Increased Power Density
Faster Operating Freequency
Reduction of Heat Sink Requirements
Higher Efficiency
Reduced EMI
Applications
Power Factor Correction Modules
Switch Mode Power Supplies
DC-AC Inverters
High Voltage DC/DC Converters
Maximum ratings (Tj=25℃ unless otherwise specified)
Symbol | Parameter | Test conditions | Value | Unit |
VDS | Drain-Source Voltage |
| 1200 | V |
ID | Continuous Drain Current | Tc=25°C Tc=100°C | 74 52 | A |
IDM | Peak Drain Current | Pulse width tp limited by Tjmax | 150 | A |
VGSmax | Gate-Source Voltage |
| -8/+22 | V |
VGSop | Recommend Gate-Source Voltage |
| -4/+ 18 | V |
Ptot | Power Dissipation | Tc=25°C Tc=100°C | 312 156 | W |
Tj | Operating Junction Temperature |
| -40~175 | °C |
Tstg | Storage Temperature |
| -40~175 | °C |
Electrical Characteristics
Static Characteristics
Symbol | Parameter | Test conditions | Value | Unit | ||
Min. | Typ. | Max. | ||||
V(BR)DSS | Drain-Source Breakdown Voltage | ID=100μA, VGS=0V | 1200 |
|
| V |
IDSS | Zero Gate Voltage Drain Current | VDS=1200V, VGS=0V |
| 1 |
| μA |
IGSS | Gate-Source Leakage Current | VDS=0V, VGS=18V |
|
| 250 | nA |
VGS(th) |
Gate Threshold Voltage | VDS=VGS, ID=10mA Tj=25°C Tj=175°C |
2 |
2.6 2.0 |
4 |
V |
RDS(on) |
Drain-Source On-State Resistance | VGS=18V, ID=40A Tj=25°C Tj=175°C |
|
37 47 |
|
mΩ |
Package Outlines
-3.jpg)
.jpg)
.jpg)
Power semiconductor devices, protection components and industrial power solutions.
