.jpg)
.jpg)
.jpg)
.jpg)
YZPST-BTB16-600B
Tip: include the part number, target voltage/current and application environment.
Downloads & technical files
YZPST-BTB16-600B 600V BTB16-600B 16A Triac
BTA16/BTB16 (BT139) Series16ATriacs
DESCRIPTION:
With high ability to withstand the shock loading of Large current, BTA16/BTB16 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrantsproducts especially recommended for use on inductive load. From all three terminals to external heatsink, BTA16 provides a rated insulation voltage of 2500 VRMS complying with UL standards
MAIN FEATURES:
symbol | value | unit |
IT(RMS) | 16 | A |
VDRM/VRRM | 600/800/ 1200 | V |
VTM | ≤ 1.5 | V |
ABSOLUTE MAXIMUM RATINGS:
Parameter | Symbol | Value | Unit |
Storage junction temperature range | Tstg | -40~150 | ℃ |
Operating junction temperature range | Tj | -40~125 | ℃ |
Repetitive peak off-state voltage (Tj=25C) | VDRM | 600/800/ 1200 | V |
Repetitive peak reverse voltage (Tj=25C) | VRRM | 600/800/ 1200 | V |
RMS on-state current | IT(RMS) | 16 | A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 160 | A |
I2t value for fusing (tp=10ms) | I2t | 128 | A2s |
Critical rate of rise of on-state current(IG=2× IGT) | dI/dt | 50 | A/μs |
Peak gate current | IGM | 4 | A |
Average gate power dissipation | PG(AV) | 1 | W |
Peak gate power | PGM | 5 | W |
ELECTRICAL CHARACTERISTICS (Tj=25C unless otherwise specified)
3 Quadrants：
| Parameter | Value | |||||||
| Test Condition | Quadrant | TW | SW | CW | BW | Unit | ||
| IGT | VD=12V, | 5 | 10 | 35 | 50 | A | ||
| VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.3 | V | |||
| VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0 2 | V | |||
| IH | IT=100mA | MAX | 15 | 25 | 40 | 60 | A | |
| Ⅰ-Ⅲ | 20 | 30 | 50 | 70 | m | |||
| IL | IG=1.2IGT | Ⅱ | MAX | 25 | 40 | 60 | 90 | A |
| VD=2/3VDRM Tj=125C Gate open | ||||||||
| dV/dt | MIN | 100 | 200 | 500 | 1000 | V/µs | ||
4 Quadrants：
| Parameter | Value | |||||
| Test Condition | Quadrant | C | B | Unit | ||
| Ⅰ- Ⅱ-Ⅲ | 25 | 50 | A | |||
| IGT | VD=12V, | Ⅳ | 50 | 70 | A | |
| VGT | RL=33Ω | ALL | MAX | 1.5 | V | |
| VGD | VD=VDRM | ALL | MIN | 0.2 | V | |
| IH | IT=100mA | MAX | 40 | 60 | A | |
| Ⅰ-Ⅲ- Ⅳ | 50 | 70 | m | |||
| IL | IG=1.2IGT | Ⅱ | MAX | 70 | 90 | A |
| VD=2/3VDRM Tj=125C Gate open | ||||||
| dV/dt | MIN | 200 | 500 | V/µs | ||
STATIC CHARACTERISTICS
| Symbol | Test Condition | Value | Unit | ||
| VTM | ITM=22.5A tp=380μs | Tj=25C | MAX | 1.5 | V |
| IDRM | Tj=25C | 5 | A | ||
| IRRM | VDRM= VRRM | Tj=125C | MAX | 1 | A |
THERMAL RESISTANCES
| Symbol | Test Condition | Value | Unit | |
| Rth(j-c) | TO-220A(Ins) | 2.1 | ℃/W | |
| TO-220B(Non-Ins) | 1.3 | |||
| TO-220F(Ins) | 2.3 | |||
| junction to case(AC) | TO-263 | 2.4 | ||
ORDERING INFORMATION
PACKAGE MECHANICAL DATA
.jpg)
.jpg)
Power semiconductor devices, protection components and industrial power solutions.
