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High dv/dt rate TO-126 600V 2P4M 2A SCR
Tip: include the part number, target voltage/current and application environment.
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2P4M 2A Sensitive SCRs
DESCRIPTION:
The 2P4M 2A SCR series provide high dv/dt rate
with strong resistance to electromagnetic interface.
They are especially recommended for use on residual
current circuit breaker, straight hair, igniter etc.
MAIN FEATURES:
symbol | value | unit |
IT(RMS) | 2.0 | A |
IGT | ≤200 | μA |
VDRM/VRRM | 600 | V |
ABSOLUTE MAXIMUM RATINGS:
Parameter | Symbol | Value | Unit |
Storage junction temperature range | Tstg | -40~150 | ℃ |
Operating junction temperature range | Tj | -40~110 | ℃ |
Repetitive peak off-state voltage (Tj=25℃) | VDRM | 600 | V |
Repetitive peak reverse voltage (Tj=25℃) | VRRM | 600 | V |
RMS on-state current | IT(RMS) | 2 | A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 20 | A |
I2t value for fusing (tp=10ms) | I2t | 2 | A2s |
Critical rate of rise of on-state current (IG=2 × IGT) | dI/dt | 50 | A/ μs |
Peak gate current | IGM | 0.2 | A |
Average gate power dissipation | PG(AV) | 0.1 | W |
Peak gate power | PGM | 0.5 | W |
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
| Symbol | Value | ||||
| Test Condition | MIN | TYPE | MAX | Unit | |
| IGT | VD=12V, RL=33Ω | - | 50 | 200 | μA |
| VGT | - | 0.6 | 0.8 | V | |
| VGD | VD=VDRM Tj=110℃ | 0.2 | - | - | V |
| IH | IT=50mA | - | - | 5 | mA |
| IL | IG=1.2IGT | - | - | 6 | mA |
| dV/dt | VD=2/3×VDRM Tj=110℃ RGK=1KΩ | 20 | - | - | V/ µs |
STATIC CHARACTERISTICS
| Symbol | Test Condition | Value | Unit | ||
| VTM | ITM=4A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
| IDRM | VD=VDRM= VRRM RGK=1KΩ | Tj=25℃ | MAX | 5 | µA |
| IRRM | Tj=110℃ | 0.1 | mA | ||
PACKAGE MECHANICAL DATA
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Power semiconductor devices, protection components and industrial power solutions.
