YZPST-7N90A0 Fast Switching TO-263 7N90A0 Silicon N-Channel Power MOSFET
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Silicon N-Channel Power MOSFET
P/N: YZPST-7N90A0
General Description：
YZPST-7N90A0 the silicon N-channel Enhanced VDMOSFETS, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard.
Features：
Fast Switching
Low Gate Charge and Rdson
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute （Tc= 25℃ unless otherwise specified）：
| Symbol | Parameter | Rating | Units |
| V DSS | Drain-to- Source Voltage | 900 | V |
| ID | Continuous Drain Current | 7 | A |
| Continuous Drain Current TC = 100 °C | 5 | A | |
| a1 | Pulsed Drain Current | 28 | A |
| IDM | |||
| VGS | Gate-to-Source Voltage | ±30 | V |
| a2 | Single Pulse Avalanche Energy | 700 | mJ |
| EAS | |||
| a1 | Avalanche Energy , Repetitive | 60 | mJ |
| EAR | |||
| a1 | Avalanche Current | 2.4 | A |
| IAR | |||
| dv/dt | Peak Diode Recovery dv/dt | 5 | V/ns |
| a3 | |||
| PD | Power Dissipation | 160 | W |
| Derating Factor above 25 °C | 1.28 | W/℃ | |
| TJ ，Tstg | Operating Junction and Storage | 150 ，– 55 to 150 | ℃ |
| Temperature Range | |||
| TL | MaximumTemperature for Soldering | 300 | ℃ |
Electrical Characteristics（Tc= 25℃ unless otherwise specified ）：
| OFF Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| V DSS | Drain to Source Breakdown | VGS =0V, I D =250µA | 900 | -- | -- | V |
| Voltage | ||||||
| ΔBVDSS/ ΔTJ | Bvdss Temperature Coefficient | ID=250uA, Reference25℃ | -- | 0.8 | -- | V/℃ |
| VDS = 900V, VGS = 0V, | -- | -- | 1 | |||
| IDSS | Drain to Source Leakage Current | Ta = 25℃ | µ A | |||
| VDS =720V, VGS = 0V, | -- | -- | 250 | |||
| Ta = 125℃ | ||||||
| IGSS( F) | Gate to Source Forward Leakage | VGS = +30V | -- | -- | 10 | µ A |
| IGSS(R ) | Gate to Source Reverse Leakage | VGS =- 30V | -- | -- | -10 | µ A |
| ON Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| RDS(ON) | Drain-to-Source On- Resistance | VGS =10V, I D =3.0A | -- | 1.4 | 1.8 | Ω |
| VGS(TH ) | Gate Threshold Voltage | VDS = VGS, I D = 250µA | 2.5 | -- | 4.5 | V |
| Pulse width tp ≤380µs,δ≤2% | ||||||
| Dynamic Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| gfs | Forward Transconductance | VDS = 15V, I D =3A | -- | 8 | -- | S |
| Ciss | Input Capacitance | -- | 1460 | -- | ||
| Coss | Output Capacitance | VGS = 0V VDS = 25V | -- | 130 | -- | pF |
| Crss | Reverse Transfer Capacitance | f = 1.0MHz | -- | 23 | -- | |
| Resistive Switching Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| td(ON) | Turn-on Delay Time | -- | 22 | -- | ||
| tr | Rise Time | I D =7.0A V DD = 450V | -- | 45 | -- | |
| td(OFF ) | Turn-Off Delay Time | VGS = 10V RG = 9.1Ω | -- | 33 | -- | ns |
| tf | Fall Time | -- | 37 | -- | ||
| Qg | Total Gate Charge | -- | 37 | -- | ||
| Qgs | Gate to Source Charge | I D =7 . 0A V DD =450V | -- | 8 | -- | nC |
| Qgd | Gate to Drain (“ Miller ”)Charge | VGS = 10V | -- | 14 | -- | |
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