YZPST-600B120E53 FF600R12ME4 2MBI600VN-120-50
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YZPST-600B120E53
IGBT Power Module
ApplicationsInverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Features
Low Vce(sat) with SPT+ technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Absolute Maximum Ratings
Parameter | Symbol | Conditions | Value | Unit |
Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25℃ | 1200 | V |
Continuous Collector Current | IC | Tc=100℃ | 600 | A |
Peak Collector Current | ICRM | ICRM=2IC | 1200 | A |
Gate-Emitter Voltage | VGES | Tvj=25℃ | ±20 | V |
Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25℃ Tvjmax=175℃ | 3750 | W |
IGBT Characteristics
Parameter |
Symbol |
Conditions |
Value |
Unit | ||
Min. | Typ. | Max. |
| |||
Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3mA,Tvj=25℃ | 5.0 | 5.8 | 6.5 | V |
Collector-Emitter Cut-off Current |
ICES | VCE=1200V,VGE=0V, Tvj=25℃ |
|
| 1.0 | mA |
VCE=1200V,VGE=0V, Tvj=125℃ |
|
| 5.0 | mA | ||
Collector-Emitter Saturation Voltage |
VCE(sat) | Ic=600A,VGE=15V, Tvj=25℃ |
| 1.70 |
| V |
Ic=600A,VGE=15V, Tvj=125℃ |
| 2.00 |
| V | ||
Input Capacitance | Cies |
VCE=25V,VGE =0V, f=1MHz, Tvj=25℃ |
| 43.1 |
| nF |
Output Capacitance | Coes |
| 2.25 |
| nF | |
Reverse Transfer Capacitance | Cres |
| 1.95 |
| nF | |
Internal Gate Resistance | Rgint |
|
| 1.25 |
| Ω |
Turn-on Delay Time | td(on) |
IC =600 A VCE = 600 V VGE = ±15V RG = 1.2Ω Tvj=25℃ |
| 250 |
| ns |
Rise Time | tr |
| 88 |
| ns | |
Turn-off Delay Time | td(off) |
| 560 |
| ns | |
Fall Time | tf |
| 131 |
| ns | |
Energy Dissipation During Turn-on Time | Eon |
| 33.1 |
| mJ | |
Energy Dissipation During Turn-off Time | Eoff |
| 57.8 |
| mJ | |
Turn-on Delay Time | td(on) |
IC =600 A VCE = 600 V VGE = ±15V RG = 1.2Ω Tvj=125℃ |
| 300 |
| ns |
Rise Time | tr |
| 102 |
| ns | |
Turn-off Delay Time | td(off) |
| 650 |
| ns | |
Fall Time | tf |
| 180 |
| ns | |
Energy Dissipation During Turn-on Time | Eon |
| 50.2 |
| mJ | |
Energy Dissipation During Turn-off Time | Eoff |
| 87.8 |
| mJ | |
SC Data |
Isc | Tp≤10us,VGE=15V, Tvj=150℃,Vcc=600V, VCEM≤1200V |
|
2400 |
|
A |
Diode Characteristics
Parameter |
Symbol |
Conditions |
Value |
Unit | ||
Min. | Typ. | Max. |
| |||
Diode DC Forward Current | IF | Tc=100℃ |
| 600 |
| A |
Diode Peak Forward Current | IFRM | IFRM=2IF |
| 1200 |
| A |
Forward Voltage |
VF | IF=600A,Tvj=25℃ |
| 1.65 |
| V |
IF=600A,Tvj=125℃ |
| 1.75 |
| V | ||
Recovered Charge | Qrr |
IF =600 A VR=600V -diF/dt =6000A/us Tvj=25℃ |
| 60.3 |
| uC |
Peak Reverse Recovery Current | Irr |
| 415 |
| A | |
Reverse Recovery Time | trr |
| 260 |
| ns | |
Reverse Recovery Energy | Erec |
| 28.1 |
| mJ | |
Recovered Charge | Qrr |
IF =600 A VR=600V -diF/dt =6000A/us Tvj=125℃ |
| 114 |
| uC |
Peak Reverse Recovery Current | Irr |
| 543 |
| A | |
Reverse Recovery Time | trr |
| 380 |
| ns | |
Reverse Recovery Energy | Erec |
| 51.8 |
| mJ | |
Circuit Diagram
Package Dimensions
Power semiconductor devices, protection components and industrial power solutions.
