YZPST-FZ600R17KE4
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P/N:YZPST-FZ600R17KE4
1700V/600ASingle Switches
Features：
1700V600A,VCE(sat)(typ.)=3.0V
Ultrafast switching speed
Excellent short circuit ruggedness
62mm single module
General Applications：
Daxin’s IGBTs offer ultrafast switching speed for application such as welding, inductive
heating, UPS and other high frequency applications
Absolute Maximum Ratings of IGBT
VCES | Collector to Emitter Voltage | 1700 | V | |
VGES | Continuous Gate to Emitter Voltage | ±30 | V | |
IC |
Continuous Collector Current | TC = 25°C | 1200 |
A |
TC = 100°C | 600 | |||
ICM | Pulse Collector Current | TJ = 150°C | 1200 | A |
PD | Maximum Power Dissipation (IGBT) | TC = 25°C, TJ = 150°C | 2660 | W |
tsc | Short Circuit Withstand Time | > 10 | µs | |
TJ | Maximum IGBT Junction Temperature | 150 | °C | |
TJOP | Maximum Operating Junction Temperature Range | -40 to +150 | °C | |
Tstg | Storage Temperature Range | -40 to +125 | °C | |
Absolute Maximum Ratings of Freewheeling Diode
VRRM | Repetitive Peak Reverse Voltage Preliminary Data | 1700 | V | |
IF |
Diode Continuous Forward Current | TC = 25°C | 1200 |
A |
TC = 100°C | 600 | |||
IFM | Diode Maximum Forward Current | 1200 | A | |
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter | Test Conditions | Min | Typ | Max | Unit | ||
BVCES | Collector to Emitter Breakdown Voltage | VGE = 0V, IC = 1mA | 1700 |
|
| V | |
ICES | Collector to Emitter Leakage Current | VGE = 0V,VCE = VCES |
|
| 5 | mA | |
IGES | Gate to Emitter Leakage Current | VGE = ±30V, VCE = 0V |
|
| 400 | nA | |
VGE(th) | Gate Threshold Voltage | IC = 1mA, VCE = VGE | 4.5 |
| 5.7 | V | |
VCE(sat) |
Collector to Emitter Saturation Voltage (Module Level) |
IC = 600A, VGE = 15V | TJ = 25°C |
| 3.00 | 3.20 |
V |
TJ = 125°C |
| 3.60 |
| ||||
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