YZPST-S2035 20A SCR

Symbol

Value

Unit

I_T(RMS)

31

A

V_DRM V_RRM

1200

V

I_GT

35

mA

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40 ~150

℃

Operating junction temperature range

Tj

-40~125

℃

Repetitive peak off-state voltage (T =25℃)

V_DRM

1200

V

Repetitive peak reverse voltage (T =25℃)

V_RRM

1200

V

Non repetitive surge peak Off-state voltage

V_DSM

V_DRM +100

V

Non repetitive peak reverse voltage

V_RSM

V_RRM +100

V

RMS on-state current (T =100℃)

I_T(RMS)

31

A

Non repetitive surge peak on-state current

I_TSM

300

A

Average on-state current (180° conduction angle)

I_T(AV)

20

A

I²t value for fusing (tp=10ms)

I²t

450

A²S

Critical rate of rise of on-state current

(I =2×IGT, tr ≤ 100 ns)

dI/dt

50

A/μS

Peak gate current

I_GM

4

A

Average gate power dissipation

P_G(AV)

1

W

Symbol

Test Condition

Value

Unit

I_GT

V =12V R =140Ω

MAX.

35

mA

V_GT

MAX.

1.3

V

V_GD

V_D=V_DRM Tj=125℃ R=1KΩ

MIN.

0.2

V

I_L

I_G=1.2I_GT

MAX.

75

mA

I_H

IT=50mA

MAX.

50

mA

dV/dt

V_D=2/3V_DRM Gate Open  Tj=125℃

MIN.

500

V/μs

Symbol

Parameter

Value(MAX.)

Unit

V_TM

I_TM =40A tp=380μs

Tj =25℃

1.65

V

I_DRM

V_D=V_DRM V_R=V_RRM

Tj =25℃

20

μA

I_RRM

Tj =125℃

4

mA

Symbol

Parameter

Value(MAX.)

Unit

Rth(j-a)

junction to  ambient(DC)

60

℃/W

Rth(j-c)

Junction to case (DC)

1.0