YZPST-2SB888

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TO-92 Plastic-Encapsulate Transistors

P/N: YZPST-2SB888

PNP Epitaxial Planar Silicon Darlington Transistor

Applications

Motor drivers, printer hammer drivers, relay drivers, votlage regulator control.

Features

High DC current gain (5000 or greater).

Large current capacity and wide ASO.

Low saturation voltage : VCE(sat)=–0.8V typ.

Absolute Maximum Ratings at Ta = 25˚C

Symbol	Parameter	Conditions	Ratings	Unit
VCBO	Collector-to-Base Voltage		–80	V
V CEO	Collector-to-Emitter Voltage		–50	V
VEBO	Emitter-to-Base Voltage		–10	V
IC	Collector Current		–0.7	A
ICP	Collector Current (Pulse)		–2	A
PC	Allowable Collector Dissipation		600	mW
Tj	Junction Temperature		150	˚C
Tstg	Storage Temperature		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Symbol	Parameter	Conditions	Ratings			Unit
Symbol	Parameter	Conditions	min	typ	max	Unit
ICBO	Collector Cutoff Current	V CB=–40V, IE=0			–0.1	µA
IEBO	Emitter Cutoff Current	VEB=–8V, IC=0			–0.1	µA
h FE1	DC Current Gain	VCE=–2V, IC=–50mA	5000
h FE2	DC Current Gain	VCE=–2V, IC=–500mA	3000
fT	Gain-Bandwidth Product	VCE=–5V, IC=–50mA		170		MHz
Cob	Output Capacitance	V CB=–10V, f=1MHz		16		pF
VCE(sat)	Collector-to-Emitter Saturation Voltage	IC=–100mA, IB=–0.1mA		–0.8	–1.2	V
V BE(sat)	Base-to-Emitter Saturation Voltage	IC=–100mA, IB=–0.1mA		–1.3	–2.0	V
V(BR)CBO	Collector-to-Base Breakdown Voltage	IC=–10µA, IE=0	–80			V
V(BR)CEO	Collector-to-Emitter Breakdown Voltage	IC=–1mA, R BE=∞	–50			V
V(BR)EBO	Emitter-to-Base Breakdown Voltage	IE=–10µA, IC=0	–10			V