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TECHNICAL PRODUCT DATA

High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs

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High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs

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2P4M/WR0205 2A Sensitive SCRs

YZPST-2P4M/WR0205

2P4M/WR0205 2A Sensitive SCRs
YZPST-2P4M/WR0205

DESCRIPTION:

The 2P4M 2A SCR series provide high dv/dt rate with strong resistance to electromagnetic interface.
They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc.

MAIN FEATURES:
symbol
value
unit
IT(RMS)
2.0
A
I_GT
≤200
μA
VDRM/VRRM
600
V

ABSOLUTE MAXIMUM RATINGS:

Parameter	Symbol	Value	Unit
Storage junction temperature range	T_stg	-40~150	℃
Operating junction temperature range	T_j	-40~110	℃
Repetitive peak off-state voltage (T_j=25℃)	V_DRM	600	V
Repetitive peak reverse voltage (T_j=25℃)	V_RRM	600	V
RMS on-state current	IT(RMS)	2	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	I_TSM	20	A
I²t value for fusing (t_p=10ms)	I2t	2	A2s
Critical rate of rise of on-state current (I_G=2×I_GT)	dI/dt	50	A/μs

Peak gate current
I_GM
0.2
A
Average gate power dissipation
PG(AV)
0.1
W
Peak gate power
P_GM
0.5
W

ELECTRICAL CHARACTERISTICS (T_j=25℃ unless otherwise specified)

Symbol	Test Condition	Value			Unit
Symbol	Test Condition	MIN	TYPE	MAX	Unit
I_GT	V_D=12V, R_L=33Ω	-	50	200	μA
V_GT	V_D=12V, R_L=33Ω	-	0.6	0.8	V
V_GD	V_D=V_DRM T_j=110℃	0.2	-	-	V
I_H	I_T=50mA	-	-	5	mA
I_L	I_G=1.2I_GT	-	-	6	mA
dV/dt	V_D=2/3×V_DRM T_j=110℃ R_GK=1KΩ	20	-	-	V/µs

STATIC CHARACTERISTICS

Symbol	Test Condition			Value	Unit
V_TM	I_TM=4A t_p=380μs	T_j=25℃	MAX	1.5	V
I_DRM I_RRM	VD=VDRM= VRRM R_GK=1KΩ	T_j=25℃	MAX	5	µA
I_DRM I_RRM	VD=VDRM= VRRM R_GK=1KΩ	T_j=110℃	MAX	0.1	mA

THERMAL RESISTANCES

Symbol
Test Condition
Value
Unit

Rth(j-c)

junction to case(AC)
TO-251-4R/TO-252-4R
6.5

℃/W
TO-92
10
TO-126
7.0
SOT-89-3L
8.3
SOT-223-3L
7.3