YZPST-FD1000A
Tip: include the part number, target voltage/current and application environment.
Downloads & technical files
Features:
. All Diffused Structure
. High Surge rating
. Blocking capabilty up to2800volts
. Soft Reverse Recovery
. Rugged Ceramic Hermetic Package
. Pressure Assembled Device
Reverse Blocking
Device Type | VRRM (1) | VRSM (1) |
FD1000A50 | 2500 | 2800 |
FD1000A56 | 2800 | 3100 |
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage | IRRM
| 10 mA 50 mA (3) |
Conducting - on state
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Average value of on-state current | IF(AV) |
| 1000 |
| A | Sinewave,180o conduction,Tc =100oC |
RMS value of on-state current | IFRMS |
| 1570 |
| A | Nominal value |
Peak one cycle surge (non repetitive) current |
IFSM |
| 25000
|
| A
| 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 175 oC |
I square t | I2t |
| 2.6x105 |
| A2s | 10 msec |
Peak on-state voltage | VFM |
| 1.65 |
| V | IFM =2500 A; Duty cycle £ 0.01%; Tj = 160 oC
|
Reverse Recovery Current (4) | IRM(REC) |
| 250 |
| A | IFM = 1000 A; dIF/dt = 10 A/ms, Tj = 160 oC |
Reverse Recovery Charge (4) | Qrr |
| * |
| mC |
|
Reverse Recovery Time (4) | tRR |
| * |
| ms |
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions | |
Operating temperature | Tj | -40 | +150 |
| oC |
| |
Storage temperature | Tstg | -40 | +150 |
| oC |
| |
Thermal resistance - junction to case | RQ (j-c)
|
| 0.023
|
| oC/W | Double sided cooled
| |
Thermal resistance - case to sink | RQ (c-s) |
| 0.010
|
| oC/W | Double sided cooled *
| |
Mounting force | P |
| 24 |
| kN |
| |
Weight | W |
|
|
600 |
g | ||
For more information about rectifier please download the PDF file above named " YANGZHOU POSITIONING TECH CO Power thyristor and diode parts "
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Power semiconductor devices, protection components and industrial power solutions.
