YZPST-M1A025120L

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YZPST-M1A025120L

N-Channel SiC Power MOSFET

Features
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitance
Easy to Parallel and Simple to Drive

Benefits

Higher System Efficiency

Reduced Cooling Requirements

Increased Power Density

Increased System Switching Frequency

Applications

Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications

Maximum Ratings (TC=25℃ unless otherwise specified)

Symbo	Parameter	Value	Unit	TestConditions	Note
VDSmax	Drain-SourceVoltage	1200	V	VGS=0V,ID=100μA
VGSmax	Gate-SourceVoltage	-0.4	V	Absolutemaximumvalues
VGSop	Gate-SourceVoltage	-0.25	V	Recommendedoperationalvalues
ID	ContinuousDrain Current	65	A	VGS=20V,Tc=25C
ID	ContinuousDrain Current	43	A	VGS=20V,Tc=100C
ID(pulse)	Pulsed DrainCurrent	200	A	Pulse width tplimited byTJmax
PD	PowerDissipation	370	W	Tc=25C,TJ=150C
TJ, TSTG	OperatingJunction andStorage	-55 to+150	C
TJ, TSTG	Temperature	-55 to+150	C

Electrical Characteristics (TC=25C unlessotherwise specified)

Symbol	Parameter	Min.	Typ.	Max.	Unit	TestConditions	Note
V(BR)DSS	Drain-SourceBreakdownVoltage	1200	/	/	V	VGS=0V,ID=100μA
VGS(th)	GateThresholdVoltage	1.9	2.4	4	V	VDS=VGS,ID=15mA	Fig.11
VGS(th)	GateThresholdVoltage	/	1.7	/	V	VDS=VGS,ID=15mA,TJ=150C	Fig.11
IDSS	Zero GateVoltageDrainCurrent	/	1	100	µA	VDS=1200V,VGS=0V
IGSS+	Gate-SourceLeakageCurrent	/	10	250	nA	VDS=0V,VGS=25V
IGSS-	Gate-SourceLeakageCurrent	/	10	250	nA	VDS=0V,VGS=-10V
RDS(on)	Drain-SourceOn-StateResistance	/	25	34	mΩ	VGS=20V,ID=50A	Fig.
RDS(on)	Drain-SourceOn-StateResistance	/	43	/	mΩ	VGS=20V,ID=50A,TJ=150C	4,5,6
Ciss	InputCapacitance	/	4200	/		VGS=0V	Fig.
Coss	OutputCapacitance	/	250	/	pF	VDS=1000V	15,16
Crss	ReverseTransferCapacitance	/	16	/		f=1MHz
Eoss	Coss StoredEnergy	/	126	/	µJ	VAC=25mV
EON	Turn-OnSwitchingEnergy	/	1.8	/	J	VDS=800V,VGS=-5V/20VID=50A,RG(ext)=2.5Ω,L=412μH
EOFF	Turn-OffSwitchingEnergy	/	0.6	/	J	VDS=800V,VGS=-5V/20VID=50A,RG(ext)=2.5Ω,L=412μH
td(on)	Turn-OnDelay Time	/	15	/
tr	Rise Time	/	12	/	ns	VDS=800V,VGS=-5V/20V,ID=50ARG(ext)=2.5Ω,RL=16Ω
td(off)	Turn-OffDelay Time	/	34	/
tf	Fall Time	/	7	/
RG(int)	Internal GateResistance	/	2.1	/	Ω	f=1MHz,VAC=25mV
GS	Gate toSourceCharge	/	54	/		VDS=800V
GD	Gate toDrain Charge	/	29	/	nC	VGS=-5V/20V
G	Total GateCharge	/	195	/		ID=50A