YZPST-SP50N80FX
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800V N-Channel Power MOSFET
YZPST-SP50N80FX
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Ordering Marking Packing Information | |||
Ordering Number |
Package |
Marking |
Packing |
SP50N80FX |
SOT-227 |
SP50N80FX |
Tube |
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted | |||
Parameter | Symbol | Value | Unit |
Drain-Source Voltage (VGS = 0V) | VDSS | 800 | V |
Continuous Drain Current | ID | 50 | A |
Pulsed Drain Current (note1) | IDM | 200 | A |
Gate-Source Voltage | VGSS | ±30 | V |
Single Pulse Avalanche Energy (note2) | EAS | 4500 | mJ |
Repetitive Avalanche Energy (note1) | EAR | 60 | mJ |
Power Dissipation (TC = 25ºC) | PD | 690 | W |
Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | ºC |
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. | |||
Thermal Resistance | |||||||||
Parameter | Symbol | Value | Unit | ||||||
Thermal Resistance, Junction-to-Case | RthJC |
0.18 |
ºC/W | ||||||
Thermal Resistance, Junction-to-Ambient | RthJA | 40 | |||||||
Specifications TJ = 25ºC, unless otherwise noted | ||||||
Parameter |
Symbol |
Test Conditions | Value |
Unit | ||
Min. | Typ. | Max. | ||||
Static | ||||||
Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 800 | -- | -- | V |
Zero Gate Voltage Drain Current | IDSS | VDS =800, VGS = 0V, TJ = 25ºC | -- | -- | 1.0 | μA |
Gate-Source Leakage | IGSS | VGS = ±30V | -- | -- | ±100 | nA |
Gate-Source Threshold Voltage | VGS(th) | IDS = 250µA | 2.5 | -- | 4.5 | V |
Drain-Source On-Resistance (Note3) | RDS(on) | VGS = 10V, ID = 25A | -- | 120 | 130 | mΩ |
Dynamic | ||||||
Input Capacitance | Ciss |
VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 14600 | -- |
pF |
Output Capacitance | Coss | -- | 1300 | -- | ||
Reverse Transfer Capacitance | Crss | -- | 66 | -- | ||
Total Gate Charge | Qg |
VDD =400V, ID =50A, VGS = 10V | -- | 360 | -- |
nC |
Gate-Source Charge | Qgs | -- | 80 | -- | ||
Gate-Drain Charge | Qgd | -- | 120 | -- | ||
Turn-on Delay Time | td(on) |
VDD = 400V, ID =50A, RG = 10 Ω | -- | 110 | -- |
ns |
Turn-on Rise Time | tr | -- | 200 | -- | ||
Turn-off Delay Time | td(off) | -- | 160 | -- | ||
Turn-off Fall Time | tf | -- | 185 | -- | ||
Drain-Source Body Diode Characteristics | ||||||
Continuous Body Diode Current | IS |
TC = 25 ºC | -- | -- | 50 |
A |
Pulsed Diode Forward Current | ISM | -- | -- | 400 | ||
Body Diode Voltage | VSD | TJ = 25ºC, ISD = 25A, VGS = 0V | -- | -- | 1.4 | V |
Reverse Recovery Time | trr | VGS = 0V,IS = 50A, diF/dt =100A /μs | -- | 520 | -- | ns |
Reverse Recovery Charge | Qrr | -- | 5.0 | -- | μC | |
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC
Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
For more information about YZPST-SP50N80FX please download the PDF file above named " YZPST-SP50N80FX "
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