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YZPST-S65R650
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P/N:YZPST-S65R650
S65R650 MOSFET
DESRCRIPTION:
The S65R650 is a Superjunction MOSFET designed to have better characteristics, such as low on-state resistance,
Low gate charge, Ultra fast switching ，and High ruggedness. These devices are well suited for high efficiency switched mode power supplies.
ABSOLUTE MAX I MUM RATINGS
Symbol | Parameter | Value | Unit | |
VDS | Drain-Source Voltage | 650 | V | |
VGS | Gate-Source Voltage | ±30 | V | |
ID |
Continuous Drain Current | Tc=25℃ | 8 | A |
Tc=100℃ | 6 | A | ||
IDM | Pulsed Drain Current | 30 | A | |
Ptot | Power Dissipation (TC=25°C) | 93 | W | |
Tj | Junction Temperature | 150 | ℃ | |
Tstg | Operation and Storage Temperature | -55 to +150 | ℃ | |
EAS | Avalanche Energy | 74 | mJ | |
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Symbol | Parameter | Test Condition | Value | Unit | ||
Min | Type | Max | ||||
BVDSS | Drain-Source Breakdown Voltage | VGS= 0V, ID= 250μA | 650 |
|
| V |
IDSS | Drain-Source Leakage Current | VDS=650V ,VGS=0V |
|
| 1 | uA |
IGSS | Gate-Source Leakage Current | VGS= ±30V |
|
| ±100 | nA |
VGS(th) | Gate Threshold Voltage | VDS= VGS, ID= 250μA | 2.5 |
| 4.5 | V |
RDS(ON) | Static Drain-Source On-State Resistance | VGS= 10V ，ID= 4A |
| 503 | 650 | mΩ |
PACKAGE MECHANICAL DATA
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