YZPST-1N5603
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High Voltage Silicon Assembly Series
YZPST-HVSS- 5KV/5.0A High Voltage Silicon Stack
FEATURES
Using the tube core combination technology level of the most advanced production.
Low leakage current, low power, -40 operating junction temperature C to + 175 degrees C degrees.
Excellent anti instantaneous large current impact resistance and reverse avalanche characteristics.
Original heat conduction performance, efficient heat dissipation design.
General and different shapes and sizes to choose or custom.
In the circuit in high voltage rectifier, isolation,protection effect.
DEVICE ELECTRICAL CHARACTERISTICS (25℃ambient temperature unless stated otherwise) | CONDITIONS | SYMBOL | 5KV/5.0A |
Maximum Repetitive Peak Reverse Voltage | VRRM | 5KV | |
Peak Reverse Working Voltage | VRWM | 5KV | |
Average Forward Current Maximum | IO | 5.0A | |
Maximum Surge Current Rating | IFSM | 150A | |
Maximum Forward Voltage Drop | @5A | VFM | 6.0V |
Peak Reverse Current | @25℃ | IRRM | 5.0uA |
Maximum Junction Temperature | TJ | 150℃ | |
Storage Temperature Range | Tstg | -40~+150℃ |
YZPST can provide Following Equivalent List of high voltage diodes.
High voltage diodes
2CLG 100mA 10KV
2CLG 100mA 20KV
2CLG 100mA 15KV
2CL 500mA 12KV
2CL104 (350mA 12KV)
2CL106 (500mA 12KV)
HV600S10 (600mA 10KV)
HV600S12 (500mA 12KV)
High Frequency High Voltage Diode
2CL G 20mA 20KV 80ns
04D, 04Z (10mA 4000V, 80ns)
08D,08X, 08Z (10mA 8000V, 80ns)
PST-12 (10mA 12000V, 80ns)
PST-14 (10mA 12000V, 80ns)
PST-16 (10mA 12000V, 80ns)
HV37-08 (200mA 8KV 80ns)
HV37-08F (200mA 8KV 70ns)
HV37-10 (200mA 10KV 80ns)
HV37-20 (200mA 20KV 80ns)
HV37-20F (200mA 20KV 70ns)
CL03-10F (300mA 10KV 80ns)
FOB (450mA 8KV 40ns)
FOB-12 (450mA 12KV 40ns)
High Voltage Silicon Stack
(20mA-10A, 30KV-500KV)
Power semiconductor devices, protection components and industrial power solutions.
