complementary silicon power transistors 2N3055/MJ2955
Tip: include the part number, target voltage/current and application environment.
Downloads & technical files
DESCRIPTION
The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case.
It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
The complementary PNP type is MJ2955.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter | l | Value | Unit |
Collector-Base Voltage | VCBO | 100 | V |
Collector-Emitter Voltage | VCEO | 60 | V |
Emitter-Base Voltage | VEBO | 7 | V |
Collector Current | IC | 15 | A |
Base Current | IB | 7 | A |
Total Dissipation at | Ptot | 115 | W |
Max. Operating Junction Temperature | Tj | 150 | oC |
Storage Temperature | Tstg | 0 | oC |
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Collector Cut-off Current | ICEO | VCE=50V, IB=0 | — | — | 0.7 | mA |
Emitter Cut-off Current | IEBO | VEB=7V, IC=0 | — | — | 5.0 | mA |
Collector-Emitter Sustaining Voltage | VCEO | IC=100mA, IB=0 | 60 | — | — | V |
DC Current Gain | hFE(1) | VCE=4.0V, IC=4.0A | 30 | — | 70 |
|
hFE(2) | VCE=4.0V, IC=10A | 15 | — |
|
| |
Collector-Emitter Saturation Voltage | VCE(sat) | IC=4.0A,IB=400mA | — | — | 1.0 |
V |
IC=10A,IB=3.3A | — | — | 3.0 | |||
Base-Emitter On Voltage | VBE(on) | VCE=4V,IC=4.0A | — | — | 1.8 | V |
Current Gain Bandwidth Product | fT | VCE=4.0V,IC=500mA | — | 3.0 | — | MHz |
For more information about 2N3055/MJ2955 please download the PDF file above named " 2N3055-MJ2955-E PST"
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Power semiconductor devices, protection components and industrial power solutions.
