YZPST-RGN700C29D8

Parameter

Value

Unit

VDS,max

700

V

RDS(on),max @ VGS  = 6 V

80

mΩ

QG,typ @ VDS  = 400 V

6.2

nC

ID,pulse

58

A

QOSS @ VDS  = 400 V

60

nC

Qrr @ VDS = 400 V

0

nC

Parameter

Symbol

Values

Unit

Note/Test Condition

Drain source voltage

VDS,max

700

V

VGS = 0 V,

Tj = -55 °C to 150 °C

Drain source voltage transient 1

VDS,transient

800

V

VGS = 0 V

Drain source voltage, pulsed 2

VDS,pulse

750

V

Tj = 25 °C; total time < 10 h

Tj = 125 °C; total time < 1 h

Continuous current, drain source

ID

29

A

Tc = 25 °C

Pulsed current, drain source 3

ID,pulse

58

A

Tc = 25 °C; VGS  = 6 V; tPULSE = 10 µs

Pulsed current, drain source 3

ID,pulse

29

A

Tc = 125 °C; VGS  = 6 V; tPULSE = 10 µs

Gate source voltage, continuous

VGS

-6 to +7

V

Tj = -55 °C to 150 °C

Gate source voltage, pulsed

VGS,pulse

-20 to +10

V

Tj = -55 °C to 150 °C;

tPULSE  = 50 ns, f = 100 kHz; open drain

Power dissipation

Ptot

188

W

Tc = 25 °C

Operating temperature

Tj

-55 to +150

。C

Storage temperature

Tstg

-55 to +150

。C

Parameter

Symbol

Values

Unit

Note/Test Condition

Thermal resistance, junction-ambient

RthJA

33.6

°C/W

Thermal resistance, junction-case

RthJC

0.52

°C/W

Maximum reflow soldering temperature

Tsold

260

°C

MSL3

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Gate threshold voltage

VGS(th)

1.2

1.7

2.5

V

ID = 30.7 mA; VDS  = VGS ; Tj = 25 °C

-

1.6

-

ID = 30.7 mA; VDS  = VGS ; Tj = 150 °C

Drain-source leakage current

IDSS

-

5

65

µA

VDS  = 700 V; VGS  = 0 V; Tj = 25 °C

-

13

390

VDS  = 700 V; VGS  = 0 V; Tj = 150 °C

Gate-source leakage current

IGSS

-

163

-

µA

VGS  = 6 V; VDS  = 0 V

Drain-source on-state resistance

RDS(on)

-

60

80

mΩ

VGS  = 6 V; ID  = 8 A; Tj = 25 °C

-

135

-

mΩ

VGS  = 6 V; ID  = 8 A; Tj = 150 °C

Gate resistance

RG

-

3

-

Ω

f = 5 MHz; open drain

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Input capacitance

Ciss

-

225

-

pF

VGS  = 0 V; VDS  = 400 V; f = 100 kHz

Output capacitance

Coss

-

70

-

pF

VGS  = 0 V; VDS  = 400 V; f = 100 kHz

Reverse transfer Capacitance

Crss

-

0.5

-

pF

VGS  = 0 V; VDS  = 400 V; f = 100 kHz

Effective output capacitance, energy related 1

Co(er)

-

105

-

pF

VGS  = 0 V; VDS  = 0 to 400 V

Effective output capacitance, time related 2

Co(tr)

-

150

-

pF

VGS  = 0 V; VDS  = 0 to 400 V

Output charge

QOSS

-

60

-

nC

VGS  = 0 V; VDS  = 0 to 400 V

Turn-on delay time

td(on)

-

3

-

ns

VDS  = 400 V; ID  = 16 A; L = 318 µH; VGS  = 6 V; Ron  = 10 Ω; Roff  = 2 Ω;

See Figure 22

Turn-off delay time

td(off)

-

5

-

ns

Rise time

tr

-

4

-

ns

Fall time

tf

-

4

-

ns

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Gate charge

QG

-

6.2

-

nC

VGS  = 0 to 6 V; VDS  = 400 V; ID = 8 A

Gate-source charge

QGS

-

0.5

-

nC

Gate-drain charge

QGD

-

2.2

-

nC

Gate plateau Voltage

VPlat

-

2.2

-

V

VDS  = 400 V; ID  = 8 A

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Source-drain reverse voltage

VSD

-

2.3

-

V

VGS  = 0 V; IS  = 8 A

Pulsed current, reverse

IS,pulse

-

-

58

A

VGS  = 6 V; tPULSE  = 10 µs

Reverse recovery charge

Qrr

-

0

-

nC

IS = 8 A; VDS  = 400 V

Reverse recovery time

trr

-

0

-

ns

Peak reverse recovery current

Irrm

-

0

-

A