PRODUCT VISUAL01 / GALLERY
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POWER COMPONENT
YZPST-RD100N26C
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100V 30mΩ N-Ch Power MOSFET
YZPST-RD100N26C
Features
Low RDS(ON)
Low Gate Charge
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
Halogen-free and RoHS-compliant
Applications
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Drivin in Power Tool, E-vehicle, Robotics
Product Summary
Parameter | Typ. | Unit |
VDS | 100 | V |
VGS(th) | 1.9 | V |
ID (@ VGS = 10V) (1) | 26 | A |
RDS(ON) (@ VGS = 10V) | 30 | mΩ |
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter | Symbol | Value | Unit | |
Drain-to-Source Voltage | VDS | 100 | V | |
Gate-to-Source Voltage | VGS | ±20 | V | |
Continuous Drain Current (1) | TC = 25°C | ID | 26 | A |
TC = 100°C | 16 | |||
Pulsed Drain Current (2) | IDM | 70 | A | |
Avalanche Current (3) | IAS | 14 | A | |
Avalanche Energy (3) | EAS | 10 | mJ | |
Power Dissipation (4) | TC = 25°C | PD | 50 | W |
TC = 100°C | 20 | |||
Junction & Storage Temperature Range | TJ , TSTG | -55 to 150 | °C | |
TO-263-3L Package Information
No additional product content is available.
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Power semiconductor devices, protection components and industrial power solutions.
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