YZPST-BT145-800R

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DESRCRIPTION:
Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high current inrush capability and high thermal cycling performance.
Features and benefits
AC power control
High bidirectional blocking voltage capability
High thermal cycling performance
Planar passivated for voltage ruggedness and reliability
High junction operating temperature capability (Tj(max) = 150 °C)
Package meets UL94V0 flammability requirement
Package is RoHS compliant
IEC 61000-4-4 fast transien
Applications
Capacitive Discharge Ignition (CDI)
Crowbar protection
Inrush protection
Motor control
Voltage regulation

High junction operating temperature capability (Tj(max) = 150 °C)

Quick reference data

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Absolute maximum rating
VRRM	repetitive peak reverse voltage		-	-	800	V
IT(RMS)	RMS on-state current	half sine wave; Tmb ≤ 128 °C;	-	-	25	A
IT(RMS)	RMS on-state current	Fig. 1; Fig. 2; Fig. 3	-	-	25	A
ITSM	non-repetitive peak on- state current	half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5	-	-	300	A
ITSM	non-repetitive peak on- state current	half sine wave; Tj(init) = 25 °C; tp = 8.3 ms	-	-	330	A
Tj	junction temperature		-	-	150	°C
Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Static characteristics
IGT	gate trigger current	VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7	1.5	-	15	mA
IH	holding current	VD = 12 V; Tj = 25 °C; Fig. 9	-	-	60	mA
VT	on-state voltage	IT = 30 A; Tj = 25 °C; Fig. 10	-	1.1	1.5	V
Dynamic characteristics
dVD/dt	rate of rise of off-state voltage	VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit	80	-	-	V/μs

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions	Min	Max	Unit
VDRM	repetitive peak off-state voltage		-	800	V
VRRM	repetitive peak reverse voltage		-	800	V
IT(AV)	average on-state current	half sine wave; Tmb ≤ 128°C;	-	16	A
IT(RMS)	RMS on-state current	half sine wave; Tmb ≤ 128°C; Fig. 1; Fig. 2; Fig. 3	-	25	A

ITSM	non-repetitive peak on- state current	half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5	-	300	A
ITSM	non-repetitive peak on- state current	half sine wave; Tj(init) = 25 °C; tp = 8.3 ms	-	330	A
I2t	I2t for fusing	tp = 10 ms; SIN	-	450	A2s
d IT/dt	rate of rise of on-state current	IG = 20 mA	-	200	A/μs
IGM	peak gate current		-	5	A
VRGM	peak reverse gate		-	5	V
VRGM	voltage		-	5	V
PGM	peak gate power		-	20	W
PG(AV)	average gate power	over any 20 ms period	-	0.5	W
Tstg	storage temperature		-40	150	°C
Tj	junction temperature		-	150	°C

Thermal Characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Rth(j-mb)	thermal resistance	Fig. 6	-	-	1	K/W
	from junction to
	mounting base
Rth(j-a)	thermal resistance	in free air	-	60	-	K/W
	from junction to
	ambient free air