YZPST-MCR100-6

symbol

value

unit

IT(RMS)

1

A

VDRM/VRRM

400/600

V

VTM

≤1.5

V

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

℃

Operating junction temperature range

Tj

-40~110

℃

Repetitive peak off-state voltage (Tj=25℃)

VDRM

400/600

V

Repetitive peak reverse voltage (Tj=25℃)

VRRM

400/600

V

RMS on-state current

IT(RMS)

0.8

A

Non repetitive surge peak on-state current (full cycle, F=50Hz)

ITSM

8

A

I2t value for fusing (tp=10ms)

I2t

0.32

A2s

Critical rate of rise of on-state current (IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

0.2

A

Average gate power dissipation

PG(AV)

0.1

W

Peak gate power

PGM

0.5

W

Symbol

Test Condition

Value

Unit

MIN

TYPE

MAX

IGT

VD=12V, RL=33Ω

-

20

200

µA

VGT

-

0.6

0.8

V

VGD

VD=VDRM Tj=110℃ RL=3.3kΩ

0.2

-

-

V

IH

IT=50mA

-

-

5

mA

IL

IG=1.2IGT

-

-

6

mA

dV/dt

VD=0.66×VDRM   Tj=110℃ G open RGK=1KΩ

10

-

-

V/ µs