65R72GF N-channel Power MOSFET as replacement of STW48N60M2

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N-channel Power MOSFET

Type:YZPST-65R72GF

Features
Fast Body Diode MOSFET
|D=47A(Vgs=10V)
Ultra Low Gate Charge
Improved dv/dt Capability
RoHS compliant
YZPST-65R72GF Power MOSFET

Applications

Switching Mode Power Supplies (SMPS)
Server and Telecom Power Supplies
Welding& Battery Chargers
Solar(PV Inverters)
AC/DC Bridge Circuits

ABSOLUTE MAXIMUM RATINGS (Tc=25oC, unless otherwise noted)
Parameter	Symbol	Limit	Unit
Drain to Source Voltage	Vdss	650	V
Continuous Drain Current (@Tc=25°C)	Id	47⑴	A
Continuous Drain Current (@Tc=100°C)	Id	29⑴	A
Drain current pulsed (2)	Idm	138⑴	A
Gate to Source Voltage	Vgs	±30	V
Single pulsed Avalanche Energy(3)	Eas	1500	mJ
MOSFET dv/dt ruggedness (@VDS=0~400V)	dv/dt	25	V/ns
Peak diode Recovery dv/dt ⑷	dv/dt	15	V/ns
Total power dissipation (@Tc=25°C)	Pd	417	W
Derating Factor above 25°C	Pd	3.34	w/°c
Operating Junction Temperature & StorageTemperature	Tstg, Tj	-55to + 150	°C
Maximum lead temperature for soldering purpose	Tl	260	°C

Notes

1. Drain current is limited by maximum junction temperature.

2. Repetitive rating : pulse width limited by junction temperature.

3 L = 37mH, l_AS = 9A, V_DD = 50V, R_G=25Q, Starting at Tj = 25°C

4. I_SD < l_D, di/dt = WOA/us, V_DD < BV_DSS, Starting at Tj =25°C

For more information about YZPST-65R72GF please download the PDF file above named " YZPST-65R72GF"

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