YZPST-GMZP2000A600V
Tip: include the part number, target voltage/current and application environment.
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Reverse Blocking
VRRM (1) | VRSM (1) |
600 | 600 |
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage | IRRM | 2 mA 20 mA |
Conducting - on state
Parameter | Symbol | Min | Max. | Typ | Units | Conditions |
Max. Average value of on-state current | IF(AV)M |
| 2000 |
| A | Sinewave, 180oconduction,Tc=90oC |
RMS value of on-state current | IF(RMS)M |
| 3140 |
| A | Nominal value |
Peak one cycle surge (non repetitive) current | IFSM |
| 15 |
| KA | Tj=25°C, VR=0,8VRRM, tp= 10ms |
I square t | I2t |
| 350 |
| KA2s | 10 msec |
Peak on-state voltage | VFM |
| 1.05 |
| V | IFM =2000 A; Tj = 25°C |
Threshold voltage | VF0 |
| - |
| V | Tj = Tj Max |
Slope resistance | rf |
| - |
| mΩ | Tj = Tj Max |
Reverse Recovery Current (4) | IRM(REC) |
| - |
| A | IFM = 1000 A; d IF/dt = 10 A/μs, Tj = 160 oC |
Reverse Recovery Charge (4) | Qrr |
| - |
| μC |
|
Reverse Recovery Time (4) | tRR |
| - |
| μs |
CASE OUTLINE AND DIMENSIONS
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Power semiconductor devices, protection components and industrial power solutions.
