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Devices & ProtectionSemiconductor Device Semiconductor Fuse Surge Protective DevicePower ComponentsResistor Capacitor Litz Wire Parts For LED DriverPower SystemsAC and DC Power Systems GaN Products Full-digital IGBT IF Power Supply Smart Drone Power Supply

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Welding Machine Rectifier Cabinet Medical Equipments Locomotive Electronics Industrial Robots & Motion Control Induction Furnace Home Appliance 5G Base Station

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TECHNICAL PRODUCT DATA

YZPST-6A10T

Home > Products > Diode > YZPST-6A10T

PRODUCT VISUAL01 / GALLERY

POWER COMPONENT

YZPST-6A10T

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6A05T THRU 6A10T

GENERAL PURPOSE SILICON DIODE

Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Amperes

FEATURES

The plastic package carries Underwriters Laboratory Flammability Classification 94V-0

Construction utilizes void-free molded plastic technique

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

260℃/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: R-6 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.072 ounce, 2.05 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25。C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

		SYMBOLS	6A05T	6A1 T	6A2T	6A4T	6A6T	6A8T	6A10T	UNITS
Maximum repetitive peak reverse voltage		VRRM	50	100	200	400	600	800	1000	VOLTS
Maximum RMS voltage		VRMS	35	70	140	280	420	560	700	VOLTS
Maximum DC blocking voltage		VDC	50	100	200	400	600	800	1000	VOLTS
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=60 C		I(AV)	6.0							Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)		IFSM	400							Amps
Maximum instantaneous forward voltage at 6.0A		VF	0.95							Volts
Maximum DC reverse current at rated DC blocking voltage	TA=25 C TA=100 C	IR	10.0 400							μA
Typical junction capacitance (NOTE 1)		CJ	150							pF
Typical thermal resistance (NOTE 2)		RθJA	10.0							。C/W
Operating junction and storage temperature range		TJ,TSTG	-65 to +175							。C