Insulated-gate bipolar transistors (IGBTs)

Semiconductor devices – Discrete devices –

Part 9: Insulated-gate bipolar transistors(IGBTs)

Dispositifs à semiconducteurs – Dispositifsdiscrets –

Partie 9: Transistors bipolaires à grille isolée(IGBT)

SEMICONDUCTOR DEVICE–DISCRETE DEVICES –

Part 9: Insulated-gate bipolar transistors(IGBTs)

FOREWORD

1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as [IEC Publication(s)"). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non- governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.

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International Standard IEC 60747-9 has been prepared by subcommittee 47E: Discrete semiconductor devices, of IEC technical committee 47: Semiconductor devices.

This second edition of IEC 60747-9 cancels and replaces the first edition (1998) and its amendment 1 (2001).

The main changes with respect to the previous edition are listed below.

a) Clause 3 was amended by adding terms that should be included.

b) Clauses 4 and 5 were amended by suitable additions and deletions that should be included.

c) Clauses 6 and 7 in Amendment 1 were combined into Clause 6 with suitable additions and corrections that should be included.

d) Clause 8 in Amendment 1 was renumbered as Clause 7. This standard is to be read in conjunction with IEC 60747-1.

The text of this standard is based on the following documents:

Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table.

This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

A list of all parts of the IEC 600747 series, under the general title: Semiconductor devices – Discrete devices , can be found on the IEC website.

The committee has decided that the contents of this publication will remain unchanged until the maintenance result date indicated on the IEC web site under " http://webstore.iec.ch" in the data related to the specific publication. At this date, the publication will be

• reconfirmed,

• withdrawn,

• replaced by a revised edition, or

• amended.

SEMICONDUCTORDEVICES –

DISCRETEDEVICES –

Part 9: Insulated-gate bipolartransistors (IGBTs)

1 Scope

This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).

2 Normative references

The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.

IEC 60747-1:2006, Semiconductor devices – Part 1:General

IEC 60747-2, Semiconductor devices – Discretedevices and integrated circuits – Part 2: Rectifierdiodes

IEC 60747-6, Semiconductor devices – Part 6:Thyristors

IEC 61340 (all parts), Electrostatics

3 Terms and definitions

For the purposes of this document, the following terms and definitions apply.

3.1 Graphical symbol of IGBT

The graphical symbol as shown below is used in this edition of IEC 60747-9.

Graphical symbol

NOTE Only the graphical symbol for N-channel IGBT is used in this standard. It equally applies for the measurement of P-channel devices. In the case of P-channel devices polarity must be adapted.